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pro vyhledávání: '"Yaochung Chang"'
Autor:
Chih-ping Chen, Pei-chun Tsai, Yaochung Chang, Minghwei Hong, M. L. Huang, Tsung-Da Lin, J. Raynien Kwo
Publikováno v:
Japanese Journal of Applied Physics. 46:3167-3180
Research efforts on achieving low interfacial density of states (Dit) as well as low electrical leakage currents on GaAs-based III–V compound semiconductors are reviewed. Emphasis is placed on ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) and atom
Autor:
Yaochung Chang, R. L. Chu, Tsung-Hung Chiang, Lungkun Chu, Tsung-Da Lin, Wei-E Wang, Hanchung Lin, Minghwei Hong, Chunan Lin, J. Raynien Kwo
Publikováno v:
Applied Physics Express. 4:111101
The interfacial density of states (Dit) distribution of high-κ dielectric Ga2O3(Gd2O3) [GGO] directly deposited on n-type Ge(100) without invoking any interfacial passivation layer (IPL) was established using conductance measurements and charge pump