Zobrazeno 1 - 10
of 23
pro vyhledávání: '"YaoChung Chen"'
Autor:
W.-B. Luo, B. Heying, Yaochung Chen, I.P. Smorchkova, Mike Wojtowicz, W. Sutton, William R. Deal, D.M. Yamauchi, M. Siddiqui, Shih-En Shih
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:3270-3277
In this paper, we present three ultra wide bandwidth low-noise amplifiers (LNAs) using dual-gate AlGaN/GaN HEMT devices. The single-stage, resistive feedback amplifiers target two different frequency bands: two LNAs operate in 0.3-4 GHz and one LNA i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::635e65e7ef20db4fcfe4ef066a2507ab
https://doi.org/10.1109/tmtt.2009.2034416
https://doi.org/10.1109/tmtt.2009.2034416
Autor:
W. Sutton, Benjamin Heying, Kevin W. Kobayashi, A. Oki, YaoChung Chen, Mike Wojtowicz, Ioulia Smorchkova, W.-B. Luo
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2648-2654
This paper reports on a S-, C-band low-noise power amplifier (LNPA) which achieves a sub-0.2 dB noise figure (NF) over a multi-octave band and a saturated output power (Psat) of 2 W at a cool temperature of -30degC . The GaN MMIC is based on a 0.2 mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f830686fd8f096cb078ac9e4d2f69c0d
https://doi.org/10.1109/jssc.2009.2026842
https://doi.org/10.1109/jssc.2009.2026842
Autor:
YaoChung Chen, Xing Lan, Mike Wojtowicz, Ioulia Smorchkova, Benjamin Heying, Flavia S. Fong, Mark Kintis, M. Truong
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:407-409
A V-band push-push GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz. The GaN VCO delivered an output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::688dbd953aaf77f0570c94d23932ec0d
https://doi.org/10.1109/lmwc.2008.922660
https://doi.org/10.1109/lmwc.2008.922660
Autor:
Martin Christopher Holland, Weigi Li, Yaochung Chen, J. H. Davies, S. P. Beaumont, I.G. Thayne, A. Paulsen, G.U. Jensen, P.K. Bhattacharya
Publikováno v:
IEEE Transactions on Electron Devices. 42:2047-2055
In this paper we present a comparative study of the high frequency performance of 80-200 mm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs) superlattice buffer quantum well (QW) HEMTs, Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs pseudomorphic HEMTs and In/su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d01fa1c1aa79747ead90e9582a32414
https://doi.org/10.1109/16.477760
https://doi.org/10.1109/16.477760
Autor:
W.-B. Luo, Aaron K. Oki, Mike Wojtowicz, Ioulia Smorchkova, William Sutton, YaoChung Chen, Kevin W. Kobayashi, Benjamin Heying
Publikováno v:
2009 IEEE Radio Frequency Integrated Circuits Symposium.
This paper reports on multi-decade bandwidth GaN HEMT Cascode-distributed power amplifier designs which achieve performance from base-band to over 20 GHz. The GaN MMICs are based on a 0.2um AlGaN/GaN low noise T-gate HEMT technology with an fT ∼ 75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37218e8f233546bf550887769cc007ba
https://doi.org/10.1109/rfic.2009.5135560
https://doi.org/10.1109/rfic.2009.5135560
Autor:
W. Sutton, M. Siddiqui, YaoChung Chen, Shih-En Shih, Benjamin Heying, Mike Wojtowicz, Ioulia Smorchkova, D.M. Yamauchi, William R. Deal
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
This paper presents two ultra wide bandwidth low noise amplifiers utilizing 0.18-um AlGaN/GaN HEMT technology. The single-stage, resistive feedback microstrip amplifiers target two different frequency bands, 0.3 – 4 GHz and 1.2 – 18 GHz, capable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3fc64b4f3ceb79e99462b904c1b8c10
https://doi.org/10.1109/mwsym.2009.5165785
https://doi.org/10.1109/mwsym.2009.5165785
Autor:
Hsiuyen Hung, Yaochung Chen
Publikováno v:
Soils and Foundations. 31:148-160
Numerical studies of shear modulus and fabric for sphere assemblies were performed by a discrete element code, TRUBAL. Results of numerical experiments were compared with physical experiments. In general, numerical experiments simulate the stress-str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a25eb8cee31131d56d0b2b8d961c3012
https://doi.org/10.3208/sandf1972.31.4_148
https://doi.org/10.3208/sandf1972.31.4_148
Autor:
W. Sutton, Aaron K. Oki, Benjamin Heying, K.W. Kobayayashi, W.-B. Luo, Mike Wojtowicz, Ioulia Smorchkova, YaoChung Chen
Publikováno v:
2008 IEEE Compound Semiconductor Integrated Circuits Symposium.
This paper reports on a S-,C-band LNA-PA which achieves a sub-0.2 dB noise figure over a multi-octave band and a Psat of 2 Watts at a cooled temperature of -30degC. The GaN MMIC is based on a 0.2 mum AlGaN/GaN-SiC HEMT technology with an fT ~ 75 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c815932ecb61cd7d48dc38b7e51f959
https://doi.org/10.1109/csics.2008.54
https://doi.org/10.1109/csics.2008.54
Autor:
William R. Deal, Benjamin Heying, W. Sutton, M. Siddiqui, Shih-En Shih, Mike Wojtowicz, Ioulia Smorchkova, YaoChung Chen
Publikováno v:
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
This paper presents a broadband low noise amplifier MMIC utilizing 0.2 urn AlGaN/GaN HEMT technology. The single-stage, resistive feedback amplifier is designed in co-planar waveguide (CPW) topology. It uses dual-gate devices with on-chip drain bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48568330b41fade1954953873d4b820d
https://doi.org/10.1109/csics07.2007.26
https://doi.org/10.1109/csics07.2007.26
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
This paper reports on a 0.2-8 GHz high dynamic range GaN MMIC LNA-PA which achieves sub-dB noise figure and a PldB of 2 watts. The GaN MMIC utilizes a 0.2 mum AlGaN/GaN-SiC HEMT technology with an fT ~75 GHz. At high power bias (15 V/400 mA), the MMI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee7823e9c5a9022377211e44eea0ae5
https://doi.org/10.1109/mwsym.2007.379977
https://doi.org/10.1109/mwsym.2007.379977