Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yao-Tung Hsu"'
Publikováno v:
IEEE Transactions on Electron Devices. 61:936-942
To better understand the channel-hot-carrier (CHC)-induced reliability problems, a modified charge-pumping (CP) technique is proposed to characterize the distribution profiles of trap generation in MOSFETs with high- k gate-stack. The effects of gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5eb3159bcdd0a7f3f1f7f847b5a704d
https://doi.org/10.1109/ted.2014.2303885
https://doi.org/10.1109/ted.2014.2303885
Publikováno v:
Applied Mechanics and Materials. :595-598
The subject of study in this work is a 135 Wp high concentration photovoltaic module with III-V solar cells. The module is currently installed in NPUST. Three equation forms for module temperature prediction were investigated. The simplest form predi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d398d3ce102a6bc8470758c59b5b3d8
https://doi.org/10.4028/www.scientific.net/amm.479-480.595
https://doi.org/10.4028/www.scientific.net/amm.479-480.595
Autor:
Fu-Chung Hou, Chun-Yuan Lu, Yao-Tung Hsu, Shih-Cheng Chang, Chun-Chang Lu, Kuei-Shu Chang-Liao, Tien-Ko Wang
Publikováno v:
Microelectronics Reliability. 51:2110-2114
Although charge pumping (CP) is a powerful technique to measure the energy and spatial distributions of interface trap and oxide trap in MOS devices, the parasitic gate leakage current in it is the bottleneck. A CP method was modified and applied to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a49929da821f9c4fc55d1f4152603d8
https://doi.org/10.1016/j.microrel.2011.04.021
https://doi.org/10.1016/j.microrel.2011.04.021
Autor:
Chi-Fong Ai, Chun-Chang Lu, Kuei-Shu Chang-Liao, Ya-Yin Hsu, Tien-Ko Wang, Fu-Chung Hou, Yao-Tung Hsu, Yan-Lin Li, Che-Hao Tsao, Chung-Hao Fu, Wen-Fa Tsai, Yu-An Chang, Dawei Heh
Publikováno v:
ECS Transactions. 35:39-53
The effects of interfacial layer at high-k dielectric/Si substrate formed by using stress-relieved pre-oxide (SRPO) treatment on electrical characteristics of MOS devices were studied in this work. The equivalent oxide thickness value could be scaled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c507d7854f09c976ad33d2c66255339a
https://doi.org/10.1149/1.3572274
https://doi.org/10.1149/1.3572274
Autor:
Yao-Tung Hsu
Publikováno v:
Volume 1: Plant Operations, Maintenance, Engineering, Modifications, Life Cycle and Balance of Plant; Nuclear Fuel and Materials; Plant Systems, Structures and Components; Codes, Standards, Licensing and Regulatory Issues.
Six nuclear power reactors in Taiwan have been operating over beyond thirty years. They are all operated by Taiwan Power Company (TPC) and expected to have 40-year lifetimes. The limited original suppliers and obsolete components are the challenge to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ae4025570deeb4986ff63fdfeed91c
https://doi.org/10.1115/icone22-30247
https://doi.org/10.1115/icone22-30247
Publikováno v:
Minds and Machines. 11:399-415
Machine learning has been proven useful for solving the bottlenecks in building expert systems. Noise in the training instances will, however, confuse a learning mechanism. Two main steps are adopted here to solve this problem. The first step is to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4886d330722ee002884ce09cb63a0250
https://doi.org/10.1023/a:1017599000794
https://doi.org/10.1023/a:1017599000794
Autor:
Hong Hwen-Fen, Cherng-Tsong Kuo, Yao-Tung Hsu, Wu Chih-Hung, I.-Tao Lung, Cheng-Dar Lee, Hwa-yuh Shin
Publikováno v:
Renewable Energy. 34:1931-1933
The 100 kW high concentration photovoltaic (HCPV) system has been constructed in October 2007 at the Institute of Nuclear Energy Research (INER), Taiwan. The maximum module efficiency with a geometrical concentration ratio of 476× is about 26.1% und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25e31f558398e68fc43f91fc5c4700e3
https://doi.org/10.1016/j.renene.2008.12.014
https://doi.org/10.1016/j.renene.2008.12.014
Autor:
Yao-Tung Hsu, Fu-Huan Tsai, Kuei-Shu Chang-Liao, Chun-Chang Lu, Tien-Ko Wang, Che-Hao Tsao, Fu-Chung Hou
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
Although charge pumping (CP) is useful for profiling traps in high-k gated MOSFETS, the parasitic leakage of CP current should be solved first. In this work, two methods are proposed to separate the CP current from the parasitic leakage in MOSFETs wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa5860f14abc5df4655bb2d1db8b903b
https://doi.org/10.1109/isdrs.2011.6135335
https://doi.org/10.1109/isdrs.2011.6135335
Autor:
Yao-Tung Hsu, Ming-Huei Chen
Publikováno v:
18th International Conference on Nuclear Engineering: Volume 1.
This paper describes the general practice and lessons learned from Commercial-Grade Item dedication for nuclear safety-related system applications in Taiwan. The dedication process qualified the commercial off-the-shelf components to be applied as ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b86b5f54a9bdc5d4166d0c11606ec89
https://doi.org/10.1115/icone18-29136
https://doi.org/10.1115/icone18-29136