Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Yao-Tsung Huang"'
Autor:
Yao-Tsung Huang, 黃耀宗
97
In recent years, in order to re-activate and re-utilize historic sites, and tie-in with government's policy of outsourcing management, Kaohsiung City government in 2000 announced 「Bill of promoting private business to participate in pubic w
In recent years, in order to re-activate and re-utilize historic sites, and tie-in with government's policy of outsourcing management, Kaohsiung City government in 2000 announced 「Bill of promoting private business to participate in pubic w
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50228742408730292515
Autor:
Yao-Tsung Huang, 黃曜宗
96
More and more organisations are increasing the demand of Information Technology (IT) project owing to the rapid technological development in nowadays business environment. With the high growth of IT project, it can cause heavy work-overload f
More and more organisations are increasing the demand of Information Technology (IT) project owing to the rapid technological development in nowadays business environment. With the high growth of IT project, it can cause heavy work-overload f
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/xthfp7
Autor:
Yao-tsung Huang, 黃耀琮
93
Statistical Process Control (called for short SPC) is an important method to monitor process quality. Furthermore, the analysis of Control charts is an important implement of SPC. Xbar-R chart has been widely used in manufacturing industries.
Statistical Process Control (called for short SPC) is an important method to monitor process quality. Furthermore, the analysis of Control charts is an important implement of SPC. Xbar-R chart has been widely used in manufacturing industries.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/15054891077805912912
Autor:
San-Lein Wu, Cheng-Wen Kuo, Yao-Tsung Huang, Shoou-Jinn Chang, Yao-Chin Cheng, Osbert Cheng, Ya-Ting Chen
Publikováno v:
IEEE Transactions on Nanotechnology. 10:1053-1058
Implementation of strained-Si MOSFETs with optimum low-cost stress-memorization technique for a 40-nm technology CMOS process was demonstrated. Devices fabricated on (1 0 0) substrate with 〈1 0 0〉channel orientation provide additional 8% current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::966f04e3991762173e03f3e450a29cdc
https://doi.org/10.1109/tnano.2010.2103567
https://doi.org/10.1109/tnano.2010.2103567
Autor:
M. Ma, Po Chin Huang, Chien Ting Lin, Osbert Cheng, Yao Tsung Huang, San Lein Wu, Jone F. Chen, Shoou-Jinn Chang
Publikováno v:
IEEE Transactions on Electron Devices. 58:1635-1642
In this paper, for the hybrid orientation technology (HOT), we propose a modified amorphization/templated recrystallization (ATR) process to improve the material quality. The characterization of Si/SiO2 interface properties for complementary metal-ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be84a11bb00adaa8e55dfe6ef224e44b
https://doi.org/10.1109/ted.2011.2126047
https://doi.org/10.1109/ted.2011.2126047
Autor:
Chin-Kai Hung, Cheng Tung Huang, Osbert Cheng, Yao-Tsung Huang, Tzu-Juei Wang, Shoou-Jinn Chang, San-Lein Wu, Cheng-Wen Kuo
Publikováno v:
IEEE Transactions on Nanotechnology. 10:433-438
This paper reports an improved densification anneal process for sub-atmospheric chemical vapor deposition (SACVD)-based shallow trench isolation (STI) to enhance CMOSFETs performance for 40-nm node and beyond. The improved STI densification process i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415fa78063ae2550935a1e853814b0a9
https://doi.org/10.1109/tnano.2010.2046744
https://doi.org/10.1109/tnano.2010.2046744
Autor:
Mike Ma, San Lein Wu, Chien-Ting Lin, Yao Tsung Huang, Shoou-Jinn Chang, Osbert Cheng, Po Chin Huang
Publikováno v:
Materials Chemistry and Physics. 126:16-19
In this work, we report an investigation into the interface property of CMOS devices using hybrid orientation technology (HOT). For nMOSFETs, devices with increased defect-removal annealing time brought about a significant reduction in the charge pum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c088e1fa467bbe79d2c5069a214090a6
https://doi.org/10.1016/j.matchemphys.2010.11.002
https://doi.org/10.1016/j.matchemphys.2010.11.002
Autor:
San Lein Wu, Shoou-Jinn Chang, Po Chin Huang, Yao Tsung Huang, Chien-Ting Lin, Osbert Cheng, Mike Ma
Publikováno v:
Microelectronics Reliability. 50:662-665
The use of hybrid orientation technology (HOT) with direct silicon bond (DSB) wafers consisting of a (1 1 0) crystal orientation layer bonded to a bulk (1 0 0) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff09d3232a78b2f268bf20e03e652bd
https://doi.org/10.1016/j.microrel.2010.01.039
https://doi.org/10.1016/j.microrel.2010.01.039
Autor:
Sanjay K. Banerjee, M. Freeman, Rick L. Wise, Angelo Pinto, Yao-Tsung Huang, Chien-Ting Lin, M. Ramin, B. Wilks, L. Denning, R. Cleavelin, M. Ma, J. Bennet, B. Nguyen, C. Johnson, K. Matthews, Mike Seacrist, M. Ries, S. Joshi
Publikováno v:
IEEE Transactions on Electron Devices. 54:2045-2050
Direct silicon bonding (DSB) for hybrid orientation technology has recently generated a lot of interest due to the significant performance enhancements reported for PMOS devices that are fabricated on alternative substrate orientations. Significantly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de275d9c9377c9fc2ab6fbd12ceb627
https://doi.org/10.1109/ted.2007.901350
https://doi.org/10.1109/ted.2007.901350
Autor:
Shoou-Jinn Chang, Yao Tsung Huang, Yao Chin Cheng, San Lein Wu, Osbert Cheng, Cheng Wen Kuo, Ching Yao Chang, Po Chin Huang
Publikováno v:
IEEE Electron Device Letters. 32:835-837
The temperature dependence of the electrical characteristics of strained nMOSFETs combining stress memorization technique (SMT) process and contact etch-stop layer has been investigated. The observed higher mobility and lower gate tunneling current o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9587e7a7ecd0dbecef64d6facd4c1611
https://doi.org/10.1109/led.2011.2140350
https://doi.org/10.1109/led.2011.2140350