Zobrazeno 1 - 1
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pro vyhledávání: '"Yao-Kai Hsu"'
Publikováno v:
Japanese Journal of Applied Physics. 42:2628-2632
This work examines different components of the leakage current in scaled N and P-metal oxide semiconductor field-effect transistor (MOSFET) with ultra thin gate oxide. Experimental results show that the gate tunneling leakage current through the sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::118a3773517bfcf49109f6dba21871cd
https://doi.org/10.1143/jjap.42.2628
https://doi.org/10.1143/jjap.42.2628
