Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yao-Hong You"'
Autor:
Cheng-Yen Chien, Wen-Hsin Wu, Yao-Hong You, Jun-Huei Lin, Chia-Yu Lee, Wen-Ching Hsu, Chieh-Hsiung Kuan, Ray-Ming Lin
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-5 (2017)
Abstract We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We
Externí odkaz:
https://doaj.org/article/520556ee952e472dbd0197637f946e44
Autor:
Ming-Lun Lee, Yao-Hong You, Ray-Ming Lin, Cheng-Ju Hsieh, Vin-Cent Su, Po-Hsun Chen, Chieh-Hsiung Kuan
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 3, Pp 1-8 (2014)
This paper demonstrates that the optimal light extraction enhancement of the 2-D photonic crystals (PhCs) light-emitting diodes (LEDs) among different air duty cycles (ADADCsCs) is independent of the geometry and the shape of the 2-D PhCs. Moreover,
Externí odkaz:
https://doaj.org/article/d58d5a43069f494e9dff7842de59d963
Autor:
Tang, Yuan a, *, Qin, Ya-dong a, Gong, Xiao-dong a, Duan, Yao-yao a, Chen, Gang b, Yao, Hong-you b, Liao, Jun-xiong c, Liao, Shi-yong d, Wang, Dong-bing a, Wang, Bao-di a
Publikováno v:
In China Geology March 2020 3(1):83-103
Autor:
Chia-Yu Lee, Chieh-Hsiung Kuan, Ray-Ming Lin, Cheng-Yen Chien, Wen-Hsin Wu, Wen-Ching Hsu, Yao-Hong You, Jun-Huei Lin
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-5 (2017)
Nanoscale Research Letters
Nanoscale Research Letters
We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdbd96f5ef13a0c23d0d820530c9cf00
http://link.springer.com/article/10.1186/s11671-017-2189-3
http://link.springer.com/article/10.1186/s11671-017-2189-3
Autor:
Ming-Lun Lee, Chieh-Hsiung Kuan, Ray-Ming Lin, Fu-Chuan Chu, Han-Cheng Hsieh, Wen-Hsin Wu, Yao-Hong You
Publikováno v:
RSC Advances. 5:67809-67813
This paper describes highly efficient InGaN-based light-emitting diodes (LEDs) grown on volcano-shaped patterned sapphire substrates with embedded SiO2 (SVPSS). Raman spectroscopy and transmission electron microscopy revealed that the LEDs grown on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3276fa30844903b22cd0bf2c2919a156
https://doi.org/10.1039/c5ra11703h
https://doi.org/10.1039/c5ra11703h
Autor:
Cheng-Ju Hsieh, Po-Hsun Chen, Ming-Lun Lee, Vincent Yi Fong Su, Ray-Ming Lin, Yao-Hong You, Chieh-Hsiung Kuan
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 3, Pp 1-8 (2014)
This paper demonstrates that the optimal light extraction enhancement of the 2-D photonic crystals (PhCs) light-emitting diodes (LEDs) among different air duty cycles (ADADCsCs) is independent of the geometry and the shape of the 2-D PhCs. Moreover,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f791387425674e93f9cec01428152a5
https://ieeexplore.ieee.org/document/6814773/
https://ieeexplore.ieee.org/document/6814773/
Autor:
Vincent Yi Fong Su, Ray-Ming Lin, Chieh-Hsiung Kuan, Zheng-Hung Hung, Po-Hsun Chen, Yao-Hong You, Yen-Pu Chen, Ta-Cheng Hsu, Yu-Yao Lin
Publikováno v:
Conference on Lasers and Electro-Optics.
This paper reported the growth of semi-polar GaN epi-layers on (0001) c-plane nano-sized patterned-sapphire substrates (c-NPSSs). In addition, the impact of c-NPSSs on the quality of semi-polar film had also been studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a43b1813121a5bedfc8388cfc1d317f5
https://doi.org/10.1364/cleo_at.2016.jth2a.78
https://doi.org/10.1364/cleo_at.2016.jth2a.78
Autor:
Vincent Yi Fong Su, Chieh-Hsiung Kuan, Ray-Ming Lin, Yao-Hong You, Po-Hsun Chen, Ming-Lun Lee, Yen-Pu Chen
Publikováno v:
SPIE Proceedings.
This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c638e621953a5ae2075b3f356b50df1d
https://doi.org/10.1117/12.2178768
https://doi.org/10.1117/12.2178768
Autor:
Chien-Hsiung Hsu, Zheng-Hung Hung, Sheng-Han Tsai, Vincent Yi Fong Su, Yen-Pu Chen, Chieh-Hsiung Kuan, Shih-Hung Lin, Po-Hsun Chen, Ming-Lun Lee, Yao-Hong You
Publikováno v:
CLEO: 2015.
We implemented the flower-like light trapping structures on the surface of HIT solar cell to achieve a great reflectance reduction and effectively improve the J SC from 34.32 mA/cm2 to 39.4 mA/cm2 compared to the reference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc97e02e57a07a99fcc3623e5e06c2e
https://doi.org/10.1364/cleo_si.2015.sw1i.7
https://doi.org/10.1364/cleo_si.2015.sw1i.7
Autor:
Chieh-Hsiung Kuan, Po-Hsun Chen, Yu-Yao Lin, Ta-Cheng Hsu, Vincent Yi Fong Su, Ming-Lun Lee, Yao-Hong You, Ray-Ming Lin, Zheng-Hung Hung, Yen-Pu Chen, Han-Bo Yang
Publikováno v:
CLEO: 2015.
The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe509316f04d5ddaadbb94dc23a28d7
https://doi.org/10.1364/cleo_at.2015.jth2a.31
https://doi.org/10.1364/cleo_at.2015.jth2a.31