Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Yao Shu-De"'
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 15 March 2012 275:33-36
Autor:
Hua, Wei, Yao, Shu-De, Theodore, N. David, Wang, Xue-Mei, Chu, Wei-Kan, Martin, Michael, Shao, Lin
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2010 268(14):2325-2328
Autor:
Hua, Wei, Yao, Shu-De, Wijesundera, Dharshana, Wang, Xue-Mei, Chu, Wei-Kan, Martin, Michael, Carter, Jesse, Hollander, Mark, Shao, Lin
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2009 267(5):813-816
Autor:
Liu, Xue-Chao, Shi, Er-Wei, Chen, Zhi-Zhan, Zhang, Hua-Wei, Song, Li-Xin, Wang, Huan, Yao, Shu-De
Publikováno v:
In Journal of Crystal Growth 2006 296(2):135-140
Publikováno v:
Applied Physics A. 117:2275-2279
Chromium ions implantation was performed into metal–organic chemical vapor deposition grown GaN thin film of thickness about 2 µm at 5 × 1016 cm−2 fluence. Implantation was performed at various substrate temperatures (RT, 250, 350 °C). Rapid t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f734e2c6129a14098da6fbada48358b9
https://doi.org/10.1007/s00339-014-8658-y
https://doi.org/10.1007/s00339-014-8658-y
Autor:
Hua, Wei1 (AUTHOR), Yao, Shu-De1 (AUTHOR) sdyao@pku.edu.cn, Theodore, N.David2 (AUTHOR), Martin, Michael3 (AUTHOR), Aitkaliyeva, Assel3 (AUTHOR), Shao, Lin3 (AUTHOR)
Publikováno v:
Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. May2010, Vol. 165 Issue 5, p388-395. 8p. 3 Black and White Photographs, 3 Graphs.
Publikováno v:
Solid State Sciences. 14:735-738
Thin films of GaN with thickness of 2 μm were synthesized on sapphire. Cr+ ions were implanted into GaN with150 keV energy at a fluence of 3 × 1015 cm−2. The annealing of the samples was carried out for a short time using rapid thermal annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d622b657692df332123c7e7e0edd5b00
https://doi.org/10.1016/j.solidstatesciences.2012.03.022
https://doi.org/10.1016/j.solidstatesciences.2012.03.022
Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence
Publikováno v:
Journal of Magnetism and Magnetic Materials. 324:797-801
In this study, we present the structural and magnetic characteristics of cobalt ions implantation at a high-fluence (5×10 16 cm −2 ) into n-GaN epilayer of thickness about 1.6 μm. The n-GaN was grown on sapphire by metal organic chemical vapor de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a48a3580ab3f7e008ea1511ac55989
https://doi.org/10.1016/j.jmmm.2011.09.021
https://doi.org/10.1016/j.jmmm.2011.09.021
Publikováno v:
Chinese Physics Letters. 25:1131-1134
Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE). From the results of Rutherford backscattering (RBS)/channeling and high resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e624b43731ca0d830e41049580d96eb6
https://doi.org/10.1088/0256-307x/25/3/088
https://doi.org/10.1088/0256-307x/25/3/088
Publikováno v:
Chinese Physics Letters. 24:831-834
Rutherford backscattering (RBS)/channelling and high resolution x-ray diffraction (HRXRD) have been used to characterize the tetragonal distortion of a GaN epilayer with four AlxGa1−xN and single AlN buffer layers grown on a Si (111) substrate by m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d938524a016ed14441aac7c068bf4f1
https://doi.org/10.1088/0256-307x/24/3/068
https://doi.org/10.1088/0256-307x/24/3/068