Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yannick Borde"'
Publikováno v:
ECS Transactions. 108:61-67
Keywords: Airborne molecular contamination, condensation defects, threshold voltage, high k metal gate, corrosion. Introduction During dies manufacturing, silicon surfaces cleaning continues to be challenged to reduce materials consumption. There’s
Publikováno v:
Microelectronic Engineering. 105:124-129
In the semiconductor industry, the control of contaminants is mandatory in order to prevent their detrimental impact on manufacturing yield. More specifically, it has been found that molecular contaminants coming from FOUPs could lead to defects on w
Publikováno v:
ECS Transactions. 25:139-146
The HCl absorption and release by FOUP polymers was characterized through the determination of its solubility and diffusion coefficients in PC and PEEK in clean room conditions (21{degree sign}C and 40% humidity). For the first time, HCl diffusion co
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 63:1370-1374
Among the methods available on the market today to control as metallic contamination in integrated circuit manufacturing, Sweeping Total reflection X-ray Fluorescence mode appears a very good method, providing fast and entire wafer mapping. With the
Publikováno v:
Solid State Phenomena. 134:269-272
Publikováno v:
Solid State Phenomena. 134:247-250
Publikováno v:
ECS Transactions. 11:151-158
Advanced Integrated Circuit (IC) manufacturing faces both the development of many products and the introduction of a large number of new materials, which represent possible risk of contamination. Therefore, the estimation of the dangerousness of meta
Publikováno v:
ECS Transactions. 11:143-150
The dissemination of metallic contamination occurring during wafer handling is of primary importance for the management of cross contamination issues. This work describes a protocol used to estimate the percentage of contamination transferred from a