Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yann Mignot"'
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1cdccf2a985295d4e2b92de150b640b
https://doi.org/10.1117/12.2615458
https://doi.org/10.1117/12.2615458
Autor:
Xinghua Sun, Yann Mignot, Christopher Cole, Eric Liu, Daniel Santos, Angelique Raley, Jennifer Church, Luciana Meli, Stuart A. Sieg, Peter Biolsi
Publikováno v:
Journal of Vacuum Science & Technology B. 40:023207
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::239707cf623729ba84b02f692626cc08
https://doi.org/10.1116/6.0001671
https://doi.org/10.1116/6.0001671
Autor:
Juntao Li, Yasir Sulehria, Nicholas A. Lanzillo, Devika Sil, Joe Lee, James J. Kelly, Raghuveer R. Patlolla, Hosadurga Shobha, Anuja DeSilva, Prasad Bhosale, Takeshi Nogami, Oleg Gluschenkov, Lawrence A. Clevenger, Son Nguyen, Jennifer Church, Huai Huang, Balasubramanian S. Haran, Yann Mignot, James J. Demarest, Andrew H. Simon, Brown Peethala Dan Edelstein
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (i.e. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch trenches demonstrated 30% line resistance (Line-R) reduction vs. leading-edge Cu with conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22fcf1415d54c5bfb077d80ab9af1cc
https://doi.org/10.1109/iitc47697.2020.9515628
https://doi.org/10.1109/iitc47697.2020.9515628
Autor:
Terry A. Spooner, James Hsueh-Chung Chen, James J. Kelly, Lawrence A. Clevenger, Ghosh Somnath, Mary-Claire Silvestre, Yann Mignot
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Self-Aligned Multiple Patterning is one of the multiple-patterning techniques to realize sub optical lithography technology nodes. The challenges for advanced interconnect levels with multiple-patterning integration are to control both metal CD and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bc0e9a6a4e3be5f7055e8f393edbc50
https://doi.org/10.1109/iitc47697.2020.9515650
https://doi.org/10.1109/iitc47697.2020.9515650
Autor:
Pietro Montanini, Stuart A. Sieg, Andrew M. Greene, Nelson Felix, Xu Wenyu, Daniel J. Dechene, Jingyun Zhang, Eric R. Miller, Yann Mignot, Carl J. Radens, Indira Seshadri, Praveen Joseph, Veeraraghavan S. Basker, Mary Breton, Tao Li
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIV.
Gate all around stacked nanosheet FET’s have emerged as the next technology to FinFET’s for beyond 7-nm scaling. With EUV technology integrated into manufacturing at 7nm, there is great interest to enable EUV direct print patterning for nanosheet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c1657e32b8611133cff6f9ccc289143
https://doi.org/10.1117/12.2552159
https://doi.org/10.1117/12.2552159
Autor:
Jennifer Church, Ashim Dutta, Michael Rizzolo, Chi-Chun Liu, Yann Mignot, Dominik Metzler, John C. Arnold, Luciana Meli, Nelson Felix, Karen Petrillo, Saumya Sharma, Hao Tang
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
Emerging memory devices, such as MRAM, RRAM, and PCM, plays an important role in in-memory computation technology which can lead to significant acceleration for machine learning and AI applications.[1-3] The basic structure of these memory cell is si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b2b0dc4996824f37adb0e203986aace
https://doi.org/10.1117/12.2552112
https://doi.org/10.1117/12.2552112
Autor:
Hsinyu Tsai, Chi-Chun Liu, Kafai Lai, Chen Zhang, Daniel Corliss, Richard A. Farrell, Nelson Felix, Chun Wing Yeung, Ruilong Xie, Yann Mignot, Elliott Franke, Cheng Chi, Jingyun Zhang
Publikováno v:
Nature Electronics. 1:562-569
The drive to deliver increasingly powerful and feature-rich integrated circuits has made technology node scaling—the process of reducing transistor dimensions and increasing their density in microchips—a key challenge in the microelectronics indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e90f2b048d34bd000337fd9b46de1ae
https://doi.org/10.1038/s41928-018-0147-4
https://doi.org/10.1038/s41928-018-0147-4
Autor:
Chi-Chun Liu, Kafai Lai, Jing Guo, Nelson Felix, John C. Arnold, Eric Liu, Richard A. Farrell, David Hetzer, Yann Mignot, Yasuyuki Ido, Makoto Muramatsu, Akiteru Ko, Daniel Corliss
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
The progress of using DSA for metal cut to achieve sub-20nm tip-to-tip (t2t) critical dimension (CD) is reported. Small and uniform t2t CD is very challenging due to lithographic limitation but holds the key to backend-of-the-line (BEOL) scaling. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1fbc443d03ad4a016308fbc964c54ef
https://doi.org/10.1117/12.2515862
https://doi.org/10.1117/12.2515862
Autor:
Domenico A. DiPaola, Nelson Felix, R. Johnson, Chi-Chun Liu, Daniel Corliss, Luciana Meli, Cheng Chi, Takuya Kuroda, Jing Guo, Yann Mignot, Harumoto Masahiko, Dustin W. Janes, Yuji Tanaka
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Lithographic and pitch-multiplying spacer technologies are widely used to shrink interconnect periodicity within critical layers. This places significant burden on overlay and CD uniformity of the subsequently patterned vias to physically contact and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ece1618b77be3d02874f9af91f4baa8a
https://doi.org/10.1117/12.2515153
https://doi.org/10.1117/12.2515153
Autor:
Hosadurga Shobha, Isabel C. Estrada-Raygoza, Yann Mignot, Theodorus E. Standaert, Cornelius Brown Peethale, James Hsueh-Chung Chen
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
SADP/SAQP are important patterning techniques for all the FEOL/BEOL line levels at 7 nm technology node and beyond. Therefore, an accurate CD and profile control of mandrel patterning is the key of a successful SADP/SAQP integration and an incorrect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13ff7b24a0d9ed69b95246584711815
https://doi.org/10.1109/iitc.2018.8430456
https://doi.org/10.1109/iitc.2018.8430456