Thickness limitation of band to band tunneling process in InGaAs/GaAsSb type-II tunnel junctions designed for multijunction solar cells

Autor: Kevin Louarn, Inès Massiot, Alexandre Bounouh, François Piquemal, Nicolas Cavassilas, Yann Claveau, Ludovic Marigo-Lombart, Alexandre Arnoult, Chantal Fontaine, Guilhem Almuneau

Publikováno v: ACS Applied Energy Materials
ACS Applied Energy Materials, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩
ACS Applied Energy Materials, ACS, 2019, 〈10.1021/acsaem.8b01700〉
ACS Applied Energy Materials, ACS, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩

International audience; This article reports on the impact of the thickness and/or the composition on the performance of type-II n+ InGaAs/p+ GaAsSb tunnel junctions. The InGaAs/GaAsSb staggered band-offset heterojunction is expected to improve tunne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27d3684c01b16c26067664b09de6133e
https://hal.laas.fr/hal-01968187/document

Tampon graduel et jonction tunnel de type II relaxés sur GaAs pour sous­ cellules solaires métamorphiques à 1 eV

Autor: Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, Yann Claveau, Ludovic Marigo-Lombart, Inès Massiot, Jonathan Colin, Clara Cornille, Leite, E., Laurent Lombez, Nicolas Cavassilas, François Piquemal, Alexandre Bounouh, Guilhem Almuneau

Publikováno v: Journées Nationales du Photovoltaïque (JNPV)
Journées Nationales du Photovoltaïque (JNPV), Dec 2017, Dourdan, France. pp.668-676
HAL

National audience; La technologie des cellules solaires tandem (MJSCs) GaAs (1.42 eV)/GaInP (1.87 eV) sur substrat GaAs est très mature, et l'ajout de sous­cellules solaires de plus petit gap à cette structure bien maîtrisée a permis d'obtenir d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3f928ab99c37df02b5e2c9de20656e19
https://hal.laas.fr/hal-01780593

Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells

Autor: Kevin Louarn, Yann Claveau, Alexandre Arnoult, Chantal Fontaine, Jonathan Colin, Clara Cornille, François Piquemal, Alexandre Bounouh, Nicolas Cavassilas, Guilhem Almuneau

Publikováno v: European PV Solar Energy Conference and Exhibition
European PV Solar Energy Conference and Exhibition, Sep 2017, Amsterdam, Netherlands
www.photovoltaic-conference.com
HAL

International audience; Aim and approach-Tunnel Junctions (TJs) are key devices for monolithic Multi-Junction Solar Cells (MJSCs), in which they ensure the series interconnection between the subcells. For GaAs based MJSCs, very low resistive (with pe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ced7c07f7aca00b76de1fbe4a8c04f50
https://hal.laas.fr/hal-01617434

Strain at interfaces of the InAs/AlSb heterostructure for quantum cascade lasers

Autor: Maxime Vallet, Yann Claveau, Bénédicte Warot-Fonrose, Christophe Gatel, Nicolas Combe, Cesar Magen, Roland Teissier, Alexei Baranov, Anne Ponchet

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::874c425c3e6e23a945e703c8d55d4ec7
https://doi.org/10.1002/9783527808465.emc2016.6786

Elastic properties of AlAs-like and InSb-like strained interfaces in [InAs/AlSb] heterostructures

Autor: Maxime Vallet, Hao Tang, Nicolas Combe, Anne Ponchet, Yann Claveau

Publikováno v: Applied Physics Letters
Applied Physics Letters, 2016, 109, pp.41903-211908. ⟨10.1063/1.4959843⟩
Applied Physics Letters, American Institute of Physics, 2016, 109, pp.41903-211908. ⟨10.1063/1.4959843⟩

International audience; Elastic properties of [InAs/AlSb] heterostructures coherently grown on a (001) InAs substrate are investigated by the density functional theory and compared to the prediction of the linear elasticity theory. The stress-strain

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f81e3627d7a7de43076b0f3f90d6473
https://hal.science/hal-01743639/document