Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yann Canvel"'
Autor:
Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Yann Canvel, Nathali Franchina Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Mustafa Ayyad, Alex Merkulov, Gouri Sankar Kar, Sebastien Couet
Publikováno v:
IEEE Electron Device Letters. 44:614-617
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf7ee37c87f29632ccf8375605a4554
https://doi.org/10.1109/led.2023.3242302
https://doi.org/10.1109/led.2023.3242302
Autor:
Asser Elsayed, Mohamed Mohamed Elkordy Shehata, Clement Godfrin, Stefan Kubicek, Shana Massar, Yann Canvel, Julien Jussot, George Simion, Massimo Mongillo, Danny Wan, Bogdan Govoreanu, Iuliana P. Radu, Ruoyu Li, Pol Van Dorpe, Kristiaan de Greve
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d756765555a0f75a3de5ff61cf1e978
http://arxiv.org/abs/2212.06464
http://arxiv.org/abs/2212.06464
Autor:
Sébastien Barnola, Yann Canvel, Christelle Boixaderas, Yann Mazel, Eugénie Martinez, Sébastien Lagrasta, K. Dabertrand
Publikováno v:
Microelectronic Engineering. 221:111183
An optimized Ge-rich GeSbTe (GST) ternary alloy is investigated to improve the thermal stability of future phase change memories (PCMs). The patterning process used for their manufacturing may change the GST surface chemical composition, thus damagin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1a5c071d797152a2f6bfae74fa4160a
https://doi.org/10.1016/j.mee.2019.111183
https://doi.org/10.1016/j.mee.2019.111183
Autor:
Yann Mazel, Sébastien Barnola, Yann Canvel, Eugénie Martinez, Christelle Boixaderas, Sébastien Lagrasta
Publikováno v:
Journal of Vacuum Science & Technology A. 37:031302
Chalcogenide materials based on GeSbTe (GST) ternary alloys are patterned using inductively coupled plasma in the manufacturing of phase change memories. The current process challenge is to maintain the GST composition and surface morphology to guara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1453428acf179f3a5edc4f5630a15094
https://doi.org/10.1116/1.5089037
https://doi.org/10.1116/1.5089037