Zobrazeno 1 - 10
of 690
pro vyhledávání: '"Yangyuan, Wang"'
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Abstract In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs)
Externí odkaz:
https://doaj.org/article/9a75c4a7e566421a913abc0da57c0793
Autor:
Le Ye, Ying Liu, Ru Huang, Peiyu Chen, Wei He, Yihan Zhang, Hao Zhang, Meng Wu, Linxiao Shen, Heyi Li, Zhixuan Wang, Yangyuan Wang, Zhichao Tan
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:4821-4834
The Internet of Things (IoT) is an interface with the physical world that usually operates in random-sparse-event (RSE) scenarios. This article discusses main challenges of IoT chips: power consumption, power supply, artificial intelligence (AI), sma
Autor:
Ru Huang, Yihan Zhang, Peng Zhou, Zhichao Tan, Ying Liu, Yangyuan Wang, Le Ye, Linxiao Shen, Haitao Fan, Zhixuan Wang, Jiayoon Ru
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:3274-3288
This article presents a 148-nW always-on wake-up system that drastically reduces the system power consumption of Internet of Things (IoT) sensor nodes while oftentimes operating in random-sparse-event (RSE) scenarios. To significantly reduce the long
Autor:
Hao Zhang, Zhixuan Wang, Zhichao Tan, Haitao Fan, Yihan Zhang, Le Ye, Yangyuan Wang, Linxiao Shen, Ru Huang, Jiayoon Ru
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:2804-2816
This work presents an ultra-low-power software-defined always-on wake-up system to drastically decrease the system power of Internet of Things (IoTs) devices, which usually operate in random-sparse-event (RSE) scenarios. It mainly thanks to a clock-f
Publikováno v:
Science China Information Sciences. 65
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:1624-1635
Power is becoming a major bottleneck in energy constraint applications such as internet-of-things (IoT). Emerging steep-slope devices such as tunnel FETs (TFET) and negative capacitance (NC) FETs are promising candidates for such type of applications
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:1160-1170
Tunnel FET is recognized as one of the most promising candidates for ultra-low power applications due to its ultra-low off current and CMOS compatibility. However, some characteristics of TFET caused by asymmetric device structure and special conduct
Publikováno v:
Science China Information Sciences. 65
Publikováno v:
IEEE Electron Device Letters. 41:665-668
In this letter, an occupancy probability prediction (OPP) model is proposed for predicting the trap occupation states of random telegraph noise (RTN) under complex gate bias waveforms. This compact model is developed based on the random charging/disc
Autor:
Hailan Feng, Heng Liu, Yupeng Liu, Sing-Wai Wong, Jinguang Wu, Dong Han, Miao Yu, Yangyuan Wang
Publikováno v:
Journal of Dental Research. 99:311-319
WNT10A (Wingless-type MMTV integration site family, member 10A) plays a crucial role in tooth development, and patients with biallelic WNT10A mutation and mice lacking Wnt10a show taurodontism. However, whether epithelial or mesenchymal WNT10A contro