Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yangbo Yi"'
Autor:
Sen Zhang, Yan Gu, Weifeng Sun, Long Zhang, Qingxi Tang, Jing Zhu, Ling Sun, Hao Wang, Shikang Cheng, Yangbo Yi, Shaohong Li
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A high-voltage SOI-LIGBT with high turn-off speed and low turn-off loss (E OFF ) is proposed in this paper. The proposed SOI-LIGBT features a Low-doped Buried N-layer (LBN) region and an emitter-side Electric Potential Modulation Trench (EPMT) shorte
Autor:
Sen Zhang, Shenli Lu, Long Zhang, Jing Zhu, Yangbo Yi, Wei Su, Weinan Dai, Longxi Shi, Weifeng Sun
Publikováno v:
IEEE Transactions on Electron Devices. 61:3814-3820
A new 700 V tridimensional channel-lateral insulated-gate bipolar transistor (TC-LIGBT) structure on 1.5- \(\mu\) m-thin silicon on insulator (SoI) layer is presented in detail in this paper. There are numerous separated p-body cells located in the e
Publikováno v:
IET Circuits, Devices & Systems. 8:509-515
A new complementary metal oxide semiconductor (CMOS) relaxation oscillator featuring with high linearity and low-jitter is presented in this study. The high linearity between the frequency and control current is achieved by adopting the floating capa
Autor:
Ye Tian, Yan Gu, Xin Tong, Wei Su, Weifeng Sun, Yangbo Yi, Fangjuan Bian, Zhuo Yang, Sen Zhang, Jing Zhu
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A composite device structure on Silicon-On-Insulator (SOI) layer named Self-adjust Conductivity Modulation SOI-LIGBT (SCM-LIGBT) is proposed. It can be divided into three parts: the normal LIGBT region (NLT structure), the EM-NMOS region (ENM structu
A high frequency isolated resonant gate driver for SiC power MOSFET with asymmetrical ON/OFF voltage
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
The resonant gate driver is the most efficient method to reduce the gate drive loss. However, the conventional resonant gate driver cannot be implemented for SiC power MOSFET because of the asymmetrical breakdown voltage of the gate-source. To improv
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
In recent years, more and more SiC power semiconductor switches have become available, showing their superior behavior for power electronics. To fully exploit the potential of the SiC MOSFET, conventional gate drivers for silicon devices must be adap
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:523-528
The failure mechanisms for two kinds of the 750-V Superjunction VDMOS (SJ-VDMOS) devices with different charge imbalance conditions (Qp Qn) under unclamped inductive switching (UIS) condition are investigated in detail by experiments and 2-D devices
Autor:
Longxing Shi, Keqin Huang, Shengli Lu, Yicheng Du, Long Zhang, Hui Yu, Yangbo Yi, Jing Zhu, Weifeng Sun
Publikováno v:
IEEE Electron Device Letters. 36:693-695
A silicon-on-insulator lateral insulated gate bipolar transistor with dual trenches located under the high voltage interconnection (HVI), which can be used in 500 V three-phase single chip inverter ICs, is proposed in this letter for the first time.
Publikováno v:
Microelectronics Reliability. 48:1804-1808
The hot-carrier degradation behavior in a high voltage p-type lateral extended drain MOS (pLEDMOS) with thick gate oxide is studied in detail for different stress voltages. The different degradation mechanisms are demonstrated: the interface trap for
Publikováno v:
Microelectronics Reliability. 46:1001-1005
In this paper, the failure process of LDMOS is analyzed. It is found that three peak electric fields locate in the Si/SiO2 interface of LDMOS, which result in three hot spots. From the time the device turns on, the first peak electric field increases