Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Yang-Hua Chang"'
Publikováno v:
Solid State Electronics Letters, Vol 2, Iss, Pp 92-97 (2020)
The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using the AFP only can reduce the peak electric field
Autor:
Yang-Hua Chang, Chien-Min Wang
Publikováno v:
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In this study, the characteristics of a double-channel AlGaN/GaN HEMT are improved. Firstly, depletion mode is changed to enhancement mode by changing the thickness of an AlGaN layer, implementing a p-doped region, and changing the material of buffer
Autor:
Lu-Hao Yang, Yang-Hua Chang
Publikováno v:
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In this study, the threshold voltage and breakdown voltage of a double-channel AlGaN/GaN HEMT is improved. Firstly, depletion mode (D-mode) is changed to enhancement mode (E-mode) by optimizing the depth of the recessed gate, the Al ratio in the AlGa
Publikováno v:
Optics Communications. 321:167-171
We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor, n -GaAs, as a defect layer. With the existence of n -GaAs, the defect modes can be tuned by external magnetic field, doping concentration
Publikováno v:
IEEE Transactions on Magnetics. 50:1-3
Publikováno v:
Microelectronic Engineering. 96:61-66
MIS capacitors with 16-nm high-k dielectric HfO"2 and 50-150nm TaN electrode were studied after post-metal-annealing (PMA) at various conditions. The effect of TaN thickness on electrical and physical properties is summarized. It has been found that
Autor:
Yang-Hua Chang, Chun-Teng Huang
Publikováno v:
Microelectronics Reliability. 52:1328-1331
A collector current model incorporating electron diffusion in the base and thermionic emission at the abrupt B–E heterojunction is derived and applied to InGaAsSb heterojunction bipolar transistors (HBTs). Parameters extracted from the model includ
Publikováno v:
Journal of the Chinese Institute of Engineers. 35:343-348
The research is aimed at designing an optimized head-mounted-display (HMD) system equipped with two 0.26-inch Liquid Crystal on Silicon display elements for imaging. In order to form an image at a distinct-vision distance of 250 mm, the eyepiece syst
Publikováno v:
Optics Communications. 285:1501-1504
The temperature dependence of the defect mode in a one-dimensional defective photonic crystal is studied by simultaneously considering thermal expansion effect and thermal–optical effect. As the thickness and index of refraction of each constituent
Autor:
Yang-Hua Chang, Yao-Jen Liu
Publikováno v:
Microelectronics Reliability. 51:2049-2052
A new method to determine source/drain series resistance has been developed for MOSFETs operated in linear region. The source/drain resistance ( R SD ) is gate-bias dependent. Channel length reduction (Δ L ) is extracted at low gate bias and chosen