Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Yang-Bing Liang"'
Publikováno v:
In Microelectronics Reliability 2011 51(12):2064-2068
Publikováno v:
World J Emerg Med
BACKGROUND: We aimed to investigate the gene expression of myocardial ischemia/reperfusion injury (MIRI) in patients with acute ST-elevation myocardial infarction (STEMI) using stress and toxicity pathway gene chip technology and try to determine the
Publikováno v:
World Journal of Emergency Medicine; 2022, Vol. 13 Issue 2, p106-113, 8p
Autor:
Yang-Bing Liang, Jian-Qiao Li
Publikováno v:
Journal of Hainan Medical University, Vol 22, Iss 24, Pp 96-99 (2016)
Objective: To study the early-warning value of DD, ALB, CHE and TNT for septic shock after percutaneous nephrolithotomy (PCNL) and their correlation with multiple organ dysfunction syndrome (MODS). Methods: Patients with septic shock after PCNL were
Autor:
Xiang-Hua, Huang, Bin, Qin, Yi-Wen, Liang, Qing-Guo, Wu, Chang-Zan, Li, Gang-Shan, Wei, Han-Chu, Ji, Yang-Bing, Liang, Hong-Qiu, Chen, Ting, Guan
Publikováno v:
Zhonghua nan ke xue = National journal of andrology. 19(1)
To investigate the effects of transurethral resection of the prostate (TURP) on lower urinary tract symptoms (LUTS) in patients with benign prostatic hyperplasia (BPH) complicated by histological prostatitis.This study included 432 cases of BPH patho
Publikováno v:
Vacuum. 42:1080-1081
Publikováno v:
Vacuum. 42:1041
The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiOxNy) films were studied in the present work. For lightly nitrided oxide, the effective electron trap concentration was found to increase rapidly with the
Publikováno v:
Acta Physica Sinica. 40:289
The microstructure and current transport behavior in the thermally nitrided silicon oxide (SiOxNy) thin films have been studied and a new model is proposed to explain the current transport behavior of the films. In particular, the model includes the
Publikováno v:
Acta Physica Sinica. 40:1855
The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiOxNy) films are studied in the present work. It is observed that when the nitridation degree is the lighter, with the increasing of the nirridation time th