Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yang Yin Chen"'
Autor:
Clima, Sergiu, Yang Yin Chen, Chao Yang Chen, Goux, Ludovic, Govoreanu, Bogdan, Degraeve, Robin, Fantini, Andrea, Jurczak, Malgorzata, Pourtois, Geoffrey
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 22, p225107-1-225107-8, 8p, 1 Chart, 9 Graphs
Autor:
Ludovic Goux, Gouri Sankar Kar, Sergiu Clima, Malgorzata Jurczak, Yang Yin Chen, Guido Groeseneken, Bogdan Govoreanu, Dirk Wouters, Robin Degraeve, Andrea Fantini
Publikováno v:
IEEE Transactions on Electron Devices. 60:1114-1121
The endurance/retention performance of HfO2/ Metal cap RRAM devices in a 1T1R configuration shows metal cap dependence. For Hf and Ti caps, owning strong thermodynamic ability of extracting oxygen from HfO2, long pulse endurance (>1010 cycles) could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::befeb9e1eee11986a21d1cfb25b81c73
https://doi.org/10.1109/ted.2013.2241064
https://doi.org/10.1109/ted.2013.2241064
Autor:
Malgorzata Jurczak, Jorge A. Kittl, Robin Degraeve, Gouri Sankar Kar, Dirk Wouters, Guido Groeseneken, Bogdan Govoreanu, Yang Yin Chen, L. Altimime, Andrea Fantini, Ludovic Goux
Publikováno v:
IEEE Transactions on Electron Devices. 59:3243-3249
By tuning the SET/RESET pulse amplitude conditions, the pulse endurance of our 40-nm HfO2/Hf 1T1R resistive-random-access-memory devices demonstrates varying failure behaviors after 106 cycles. For unbalanced SET/RESET pulse amplitude conditions, bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4044416815e816a8e050104b76c5096
https://doi.org/10.1109/ted.2012.2218607
https://doi.org/10.1109/ted.2012.2218607
Autor:
Sergiu Clima, Dirk Wouters, Guido Groeseneken, Bogdan Govoreanu, Malgorzata Jurczak, Gouri Sankar Kar, Yang Yin Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve
Publikováno v:
IEEE Electron Device Letters. 34:626-628
Low resistance state (LRS) retention after 104 and 106 pulse cycles is compared to the uncycled LRS retention, based on the (40 × 40 nm)- HfO2/Hf bipolar RRAM devices in a 1T1R configuration. The LRS retention after 104 pulse cycles does not show de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a502ad65317cb70df2774ba2789e39
https://doi.org/10.1109/led.2013.2251857
https://doi.org/10.1109/led.2013.2251857
Autor:
Guido Groeseneken, Dirk Wouters, Leqi Zhang, Malgorzata Jurczak, Ludovic Goux, Yang Yin Chen, Yung-Hsien Wu, Paul Hendrickx, Andrea Fantini
Publikováno v:
IEEE Electron Device Letters. 34:414-416
TiN/Hf/HfO 2 /poly-Si structure was employed as the platform to investigate the resistive switching mechanism of metal-insulator-semiconductor (MIS)-based resistive random access memory (RRAM) devices. Based on the presence of a HfSiO x interfacial l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f020176ced99286aafcb30fd18d99d9b
https://doi.org/10.1109/led.2013.2241726
https://doi.org/10.1109/led.2013.2241726
Autor:
Bogdan Govoreanu, Ludovic Goux, Robin Degraeve, Yang Yin Chen, Gouri Sankar Kar, Sergiu Clima, Malgorzata Jurczak, Andrea Fantini, Dirk Wouters, Geoffrey Pourtois
Publikováno v:
ECS solid state letters
In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2ebdd03b327dde8d58a1f3907f3bdb6
https://doi.org/10.1149/2.003204ssl
https://doi.org/10.1149/2.003204ssl
Autor:
Guido Groeseneken, Yang Yin Chen, Bogdan Govoreanu, Andrea Fantini, Gouri Sankar Kar, Ludovic Goux, Dirk Wouters, Robin Degraeve, Leqi Zhang, Malgorzata Jurczak
Publikováno v:
IEEE Electron Device Letters. 33:1186-1188
A novel procedure to decompose the I- V switching curves of complementary resistive switching (CRS) RRAM cells into the intrinsic switching characteristics of its individual constituting elements is proposed based on the set behavior of HfO2-based bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e530f7888aabaed1ff89c29f3426f772
https://doi.org/10.1109/led.2012.2198789
https://doi.org/10.1109/led.2012.2198789
Autor:
Michael Toeller, Dirk Wouters, Jorge A. Kittl, Malgorzata Jurczak, J. Swerts, Yang Yin Chen, Guido Groeseneken, C. Adelmann, Ludovic Goux
Publikováno v:
IEEE Electron Device Letters. 33:483-485
We developed TiN\HfO2\TiN RRAM devices by using hydrogen-based plasma enhanced atomic layer deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN). B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d32f6e0b5b65111beaf7dee31a6bad7
https://doi.org/10.1109/led.2012.2185212
https://doi.org/10.1109/led.2012.2185212
Autor:
Ludovic Goux, Gouri Sankar Kar, Malgorzata Jurczak, Yang Yin Chen, Andrea Fantini, Augusto Redolfi, Robin Degraeve
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeae4dd60e6f75644d05618e11c95dc5
https://doi.org/10.1109/vlsit.2014.6894433
https://doi.org/10.1109/vlsit.2014.6894433