Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Yang Xian Li"'
Autor:
ZHANG, Xi-juan, LAI, Yong-cai *, MENG, Ying, TANG, Ao, DONG, Wen-jun, LIU, You-hong, LIU, Kai, WANG, Li-zhi, YANG, Xian-li, WANG, Wen-long, DING, Guo-hua, JIANG, Hui, REN, Yang, JIANG, Shu-kun *
Publikováno v:
In Journal of Integrative Agriculture February 2023 22(2):325-340
Akademický článek
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Autor:
Jun Shen, Jin-Liang Zhao, Feng-Xia Hu, Jian-Feng Wu, Mao-Qiong Gong, Yang-Xian Li, Ji-Rong Sun, Bao-Gen Shen
Publikováno v:
Journal of Applied Physics; May2010, Vol. 107 Issue 9, p09A931-1-09A931-3, 3p
Autor:
Jun Shen, Fang Wang, Jin-Liang Zhao, Jian-Feng Wu, Mao-Qiong Gong, Feng-Xia Hu, Yang-Xian Li, Ji-Rong Sun, Bao-Gen Shen
Publikováno v:
Journal of Applied Physics; May2010, Vol. 107 Issue 9, p09A909-1-09A909-3, 3p
Autor:
Ming Zhang, Zhu-Hong Liu, Hai-Ning Hu, Guo-Dong Liu, Yu-Ting Cui, Guang-Heng Wu, Brück, Ekkes, de Boer, Frank R., Yang-Xian Li
Publikováno v:
Journal of Applied Physics; 6/1/2004, Vol. 95 Issue 11, p7219-7221, 3p, 1 Chart, 3 Graphs
Publikováno v:
Journal of Applied Physics; Jun2010, Vol. 107 Issue 11, p113911, 5p, 5 Graphs
Publikováno v:
Applied Mechanics and Materials. :575-582
A finite element model simulating the experiment on multiplanar unstiffened CHS KT joints with K-plane overlapped and out-of-plane not (KT-IPOv joints), with the background of Suzhou International Convention & Exhibition Center, was advanced and vali
Electronic Structures and Chemical Bonding of the Layered Tungsten Borides: An Ab Initio Calculation
Publikováno v:
Key Engineering Materials. :178-181
We have investigated the electronic structures and chemical bonding of four tungsten borides, including two WB2 compounds with different crystal structures, α-W2B5 and ε-WB2.5, by ab initio calculations based on density function theory (DFT). The c
Publikováno v:
Advanced Materials Research. 58:41-46
Mineral attapulgite powders were heat treated at different temperature from 100°C to 800°C. The effect of heat treatment on properties of attapulgite were studied by particle size distribution, surface free energy, and water vapor adsorption perfor
Publikováno v:
Materials Science Forum. :1113-1116
Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated sili