Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Yang Dabao"'
Publikováno v:
Dianzi Jishu Yingyong, Vol 45, Iss 7, Pp 14-18 (2019)
The structure and dimension of Schottky diode were designed. The loss at high frequency was reduced using a quasi-whisker contacted anode structure by a metal finger akin to an air bridge. The nonlinear model of Schottky anode and three dimensional e
Externí odkaz:
https://doaj.org/article/5fcff04e7382419ca39da8c6782f9cf3
Autor:
Che Xianghui, Liang Shixiong, Zhang Lisen, Gu Guodong, Hao Wenjia, Yang Dabao, Chen Hongtai, Feng Zhihong
Publikováno v:
Dianzi Jishu Yingyong, Vol 45, Iss 8, Pp 32-33 (2019)
AlAs/InGaAs/AlAs resonant tunneling materials was optimized, and terahertz resonant tunneling diodes grown by MOCVD is first fabricated. The epitaxial layers of the RTD were grown on semi-insulating InP substrate. InP-based RTD were fabricated by usi
Externí odkaz:
https://doaj.org/article/20b84120bee84f6a866e040dc6395343
Autor:
Peng Xu, Xubo Song, Zhang Lisen, Yuanjie Lv, Shixiong Liang, Yang Dabao, Aimin Bu, Shujun Cai, Guodong Gu, Zhihong Feng, Guo Yanmin, Xing-Chang Fu
Publikováno v:
IEEE Electron Device Letters. 42:1588-1591
A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::710f2f25d1a21b50191b226ecab93df3
https://doi.org/10.1109/led.2021.3110781
https://doi.org/10.1109/led.2021.3110781
Akademický článek
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Autor:
杨大宝 Yang Dabao, 张立森 Zhang Lisen, 徐鹏 Xu Peng, 赵向阳 Zhao Xiangyang, 顾国栋 Gu Guodong, 梁士雄 Liang Shixiong, 吕元杰 Lv Yuanjie, 冯志红 Feng Zhihong
Publikováno v:
Infrared and Laser Engineering. 51:20220168
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19aa52c908b7626933f8b430c8dfbe6f
https://doi.org/10.3788/irla20220168
https://doi.org/10.3788/irla20220168
Autor:
Yamin Zhang, Zhihong Feng, Yuanjie Lv, Shaobo Dun, Zhang Lisen, Wang Yuangang, Xubo Song, Shixiong Liang, Yang Dabao, Tan Xin, Zhirong Zhang
Publikováno v:
ASICON
We presented a GaN Schottky diode model with consideration of self-heating effect of devices in operation. The impact of diode chip temperature on the current and capacitance was taken into account in this model. The thermal resistance of diode chip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1775d5108df5fa040b4bcc0b4987dc6c
https://doi.org/10.1109/asicon47005.2019.8983542
https://doi.org/10.1109/asicon47005.2019.8983542
Publikováno v:
Infrared and Laser Engineering. 48:225001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47832442b4e9b851f405d3a82bcfaea6
https://doi.org/10.3788/irla201948.0225001
https://doi.org/10.3788/irla201948.0225001
Publikováno v:
Chinese Journal of Lasers. 46:0614035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032afc91c43aa3d89e2b2cf76467ea4e
https://doi.org/10.3788/cjl201946.0614035
https://doi.org/10.3788/cjl201946.0614035
Autor:
Wang Junlong, Yang Dabao, Feng Zhihong, Xing Dong, Liang Shixiong, Zhang Lisen, Zhao Xiangyang
Publikováno v:
SPIE Proceedings.
This paper presents a sub-harmonic mixer operating over the spectral band 332-348 GHz. The mixers employ integrated GaAs membrane Schottky diode technology. The simulated results show that the conversion loss of the mixer is below dB in the band from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a12d8a660c8b7f98faf18a6aac6933
https://doi.org/10.1117/12.2211491
https://doi.org/10.1117/12.2211491
Autor:
Yang Dabao, L. S. Zhang, Zhao Xiangyang, H. Y. Guo, J. L. Wang, Shixiong Liang, G. D. Gu, Xing Dong, Y. L. Fang, Zhihong Feng
Publikováno v:
2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
The Schottky barrier diodes based on homoepitaxial n-type GaN materials are fabricated for high-power terahertz multiplier applications. The dislocation density of the GaN homoepilayer is estimated to be about 2–3 orders lower than the typical disl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd06dad3c88b4a18ccf23a0fe54e573
https://doi.org/10.1109/irmmw-thz.2015.7327726
https://doi.org/10.1109/irmmw-thz.2015.7327726