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Design and demonstration of Cu/Al2O3 /Cu RRAM with complementary resistance switching characteristic
Autor:
Huanmei Yuan, Yang Char, Shunqi Dai, Cristine Jin Estrada, Yuqing Zhang, Annan Xiong, Hao Bai, Guangyu Du, Songhua Cai, Zhimin Li, Songcen Xu, Mansun Chan
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).