Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yang, Yinxiao"'
Autor:
Yang, Yinxiao
The strategic importance of microelectronics is reflected in its ubiquity in the global production network and in our daily lives. Above all, the microelectronics revolution has been enabled and driven by the scalability of the silicon transistor and
Externí odkaz:
http://hdl.handle.net/1853/47613
Autor:
Lin, Qinzhen, Lian, Ruoping, Liu, Haoyang, Li, Wenhui, Li, Junying, Feng, Yating, Lin, Yi, Liu, Suyao, Liu, Weijie, Yang, Kaiyu, Yang, Yinxiao, Chai, Yaling, Chen, Zhong, Guo, Ziquan
Publikováno v:
In Energy & Buildings 1 December 2024 324
Autor:
Yang, Yinxiao, Murali, Raghunath
Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the ribbon widt
Externí odkaz:
http://arxiv.org/abs/1001.2318
Graphene nanoribbons (GNRs) with widths down to 16 nm have been characterized for their current-carrying capacity. It is found that GNRs exhibit an impressive breakdown current density, on the order of 10^8 A/cm2. The breakdown current density is fou
Externí odkaz:
http://arxiv.org/abs/0906.4156
Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm
Externí odkaz:
http://arxiv.org/abs/0906.0924
Publikováno v:
In Carbon April 2012 50(5):1727-1733
Publikováno v:
In Carbon 2012 50(2):637-645
Autor:
Chang Ho Maeng, Yang Yinxiao, Yang Yong Mo, Charlotte Adams, Wang Keun Cho, Hong Junsic, Massud Aminpur, Sang Woo Lim, Park Mira
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
Self-Aligned Double Patterning (SADP) has been used as a promising solution for advanced nodes (sub-14nm) because of fewer overlay problems and better process tolerance. However, SADP can generate process variations such as “pitch-walking” as a b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac9c3d36be6efb7ada1332ff18590f5d
https://doi.org/10.1109/iitc.2018.8430443
https://doi.org/10.1109/iitc.2018.8430443
Publikováno v:
The Journal of Physical Chemistry - Part C; 20240101, Issue: Preprints
Akademický článek
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