Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Yang, Ji‐Hui"'
Charge transfer in type-II heterostructures plays important roles in determining device performance for photovoltaic and photocatalytic applications. However, current theoretical studies of charge transfer process don't consider the effects of operat
Externí odkaz:
http://arxiv.org/abs/2305.04732
Illumination has been long known to affect semiconductor defect properties during either growth or operating process. Current theories of studying the illumination effects on defects usually have the assumption of unaffected formation energies of neu
Externí odkaz:
http://arxiv.org/abs/2305.02600
Li$_x$CoO$_2$ based batteries have serious capacity degradation and safety issues when cycling at high-delithiation states but full and consistent mechanisms are still poorly understood. Herein, a global neural network potential (GNNP) is developed t
Externí odkaz:
http://arxiv.org/abs/2212.14667
Despite the successes of machine learning methods in physical sciences, prediction of the Hamiltonian, and thus electronic properties, is still unsatisfactory. Here, based on graph neural network architecture, we present an extendable neural network
Externí odkaz:
http://arxiv.org/abs/2205.05475
Autor:
Wang, Fanjie, Xu, Yonggang, Mu, Lei, Zhang, Jiasheng, Xia, Wei, Xue, Jiamin, Guo, Yanfeng, Yang, Ji-Hui, Yan, Hugen
Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phosphorus is a prominent example. However, it suffers from poor ambient stab
Externí odkaz:
http://arxiv.org/abs/2204.12763
Ideal two-dimensional (2D) semiconductors with high mobility comparable to three-dimensional (3D) Si or GaAs are still lacking, hindering the development of high-performance 2D devices. Here in this work, using first-principles calculations and consi
Externí odkaz:
http://arxiv.org/abs/2204.11419
It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work, we find a
Externí odkaz:
http://arxiv.org/abs/2204.11415
Publikováno v:
Phys. Rev. B 102, 035202 (2020)
Determination of defect ionization energy in low-dimensional semiconductors has been a long-standing unsolved problem in first-principles defect calculations because the commonly used methods based on jellium model introduce an unphysical charge dens
Externí odkaz:
http://arxiv.org/abs/2001.03895
Autor:
Yang, Ji-Hui, Yakobson, Boris. I.
In spite of great appeal of two-dimensional (2D) semiconductors for electronics and optoelectronics, to achieve required charge carrier concentrations by means of chemical doping remains a challenge, due to large defect ionization energies (IEs). Her
Externí odkaz:
http://arxiv.org/abs/1711.05094
Autor:
Yang, Ji-Hui, Yakobson, Boris I.
Common substitutional isovalent semiconductor alloys usually form disordered metastable phases with positive excess formation enthalpies ({\Delta}H). In contrast, monolayer alloys of transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se)
Externí odkaz:
http://arxiv.org/abs/1710.05064