Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Yan-juan, Liu"'
Publikováno v:
Micro & Nano Letters, Vol 16, Iss 2, Pp 121-126 (2021)
Abstract In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT. A
Externí odkaz:
https://doaj.org/article/ea13e38e91d04a3b9d863f4276b3ed1b
Autor:
Wen-xuan Chen, Wen-long Zhang, Huan-huan Zhang, Yuan-zhen Lai, Jun Huang, Yang Lei, Yan-juan Liu, Xiao-li Wang, Hua-fei Deng
Publikováno v:
Shock; Jun2024, Vol. 61 Issue 6, p951-960, 10p
Publikováno v:
International Journal of Analytical Chemistry, Vol 2022 (2022)
In this study, a colloidal gold immunochromatographic strip was developed for simultaneous detection of rhein and aloe-emodin in rhubarb. The cutoff value, defined as the lowest concentration for which the test line was invisible on the strip, was 50
Externí odkaz:
https://doaj.org/article/46df652f2cb142dca9354060e2e06472
Publikováno v:
Results in Physics, Vol 29, Iss , Pp 104803- (2021)
In this paper, the triggering process for single-event burnout (SEB) in conventional 4H-SiC trench insulated gate bipolar transistors (C-TIGBTs) is described. Furthermore, SEB is studied for both a conventional structure and a new structure. The new
Externí odkaz:
https://doaj.org/article/9395ebb366dc4243b8cef76e8d8ea6be
Publikováno v:
In Superlattices and Microstructures October 2018 122:165-170
Autor:
Bo, Zhang, Jie, Xin, Yan-Juan, Liu, Xiao, Wang, Hong-Jing, Dong, Zhen, Wang, Lan-Ping, Guo, Xin-Peng, Li
Publikováno v:
Zhongguo Zhong yao za zhi = Zhongguo zhongyao zazhi = China journal of Chinese materia medica. 47(23)
The quality of Chinese medicine is the foundation of the clinical effects and industrial development. Component analysis ensures the consistency and stability of medicinals, but fails to evaluate the clinical efficacy. Bioassay is an analytical metho
Publikováno v:
Micro & Nano Letters, Vol 16, Iss 2, Pp 121-126 (2021)
In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT. An npn str
Autor:
Ya-Qin Zhao, Yanan Shang, Qian-Qian Zhong, Baoyu Gao, Qinyan Yue, Yan-Juan Liu, Li Shen, Xing Xu, Li-Cong Meng, Yu-Cui Hao
Publikováno v:
Environmental science and pollution research international. 28(26)
Preferential removal of phosphate from aqueous was conducted by a novel biomass-based nanocomposite (EP-N+-Zr) with encapsulated hydrous zirconium oxide, and the biopolymer EP-N+-Zr features were described. EP-N+-Zr exhibited high selective sequestra
Publikováno v:
Results in Physics, Vol 29, Iss, Pp 104803-(2021)
In this paper, the triggering process for single-event burnout (SEB) in conventional 4H-SiC trench insulated gate bipolar transistors (C-TIGBTs) is described. Furthermore, SEB is studied for both a conventional structure and a new structure. The new
Publikováno v:
IEEE Transactions on Electron Devices. 64:3028-3031
In this paper, a multiple trench split-gate silicon-on-insulator (SOI) lateral double-diffused MOSFET with a Schottky rectifier (MTS-SG-LDMOS) is proposed and its characteristics are studied using 2-D simulations. The new structure features double ox