Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yan-Zhe Tang"'
Autor:
Hong-Gang Liang, Yong Yu, De-Yuan Xiao, Jing-Fei Zhu, Jing Liang, Lan-Song Ba, Ji-Bin Leng, Zheng-Yong Zhu, Yong-Jie Li, Xing-Song Su, Kobe Weng, Li Bai, Yan-Zhe Tang, Hong-Bo Sun, Gui-Lei Wang, Hong-Wen Li, Wei-Feng Xu, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Chao Zhao
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5beb8e619ae82dadc2b90f15d3c4d60
https://doi.org/10.1109/icsict55466.2022.9963326
https://doi.org/10.1109/icsict55466.2022.9963326
Autor:
Yu Yong, Jing Liang, Nan Yang, De-Yuan Xiao, Jian-Peng Jiang, Jing-Rui Guo, Ling-Fei Wang, Di Geng, Lan-Song Ba, Hong-Gang Liang, Ya-Nan Lu, Dan Wang, Yu-Ke Li, Xiao-Ming Yin, Long Huang, Jiang-Liu Shi, Gui-Lei Wang, Yan-Zhe Tang, Hong-Wen Li, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Ling Li, Chao Zhao
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f2d563be2683d0fb98bfe7760308df
https://doi.org/10.1109/icsict55466.2022.9963228
https://doi.org/10.1109/icsict55466.2022.9963228
Autor:
Wen-Qi Wang, Xiang Liu, Yong Yu, De-Yuan Xiao, Lan-Song Ba, Hong-Gang Liang, Jing Liang, Jong-Sung Jeon, Xing-Song Su, Qing-Hua Han, Jing-Fei Zhu, Jing-Heng Meng, Jin Dai, Hong-Bo Sun, Gui-Lei Wang, Yan-Zhe Tang, Hong-Wen Li, Wei-Feng Xu, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Chao Zhao
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10fb281748d7bcc2e43e87a622fe9f16
https://doi.org/10.1109/icsict55466.2022.9963197
https://doi.org/10.1109/icsict55466.2022.9963197
Autor:
Zhi Xian Chen, Yan Zhe Tang, Dim-Lee Kwong, Zheng Fang, Bao Bin Weng, X. P. Wang, Joon Sohn, J. Provine, Zhiping Zhang, Guo-Qiang Lo, H.-S. Philip Wong, S. Simon Wong
Publikováno v:
IEEE Electron Device Letters. 35:912-914
In this letter, we examine the role of the Ti capping layer in HfO x -based resistive random access memory (RRAM) devices on the memory performance. It is found that with a thicker Ti capping layer, the fresh device initial leakage current increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a761088696715f9ba9981cfe604774d
https://doi.org/10.1109/led.2014.2334311
https://doi.org/10.1109/led.2014.2334311
Publikováno v:
IEEE Electron Device Letters. 35:627-629
In this letter, a novel and fully CMOS compatible RRAM stack— $({\rm TiN\hbox{-}TaO}_{x}\hbox{-}{\rm Hf\hbox{-}HfO}_{y}\hbox{-}{\rm TiN})$ has been demonstrated. By serially connecting two back-to-back subcells, ${\rm Hf\hbox{-}HfO}_{y}\hbox{-}{\rm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb25323f54cd2a9f1116322df1766a7b
https://doi.org/10.1109/led.2014.2314093
https://doi.org/10.1109/led.2014.2314093
Publikováno v:
International Journal of Nonlinear Sciences & Numerical Simulation; 2002, Vol. 3 Issue 3/4, p315-318, 4p
Autor:
Wen-Hui, Wang, Yan-Zhe, Tang, Yun-Xiang, Wang, Hong-Chang, Qu, Ya-Ming, Wu, Tie, Li, Jian-Yi, Yang, Yue-Lin, Wang, Ming, Liu
Publikováno v:
Chinese Physics Letters; Jul2004, Vol. 21 Issue 7, p1-1, 1p
Autor:
Yan-Zhe, Tang, Ke-Miao, Jia, Bai-Yang, Li, Jian-Yi, Yang, Xiao-Qing, Jiang, Ya-Ming, Wu, Yue-Lin, Wang
Publikováno v:
Chinese Physics Letters; Jun2004, Vol. 21 Issue 6, p1-1, 1p