Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Yan-Ying Tsai"'
Autor:
Yan-Ying Tsai, 蔡衍穎
96
In this dissertation, a series of Schottky contact-type hydrogen sensors are proposed. By using the catalytic metals (Pd or Pt) as the gate materials, the hydrogen molecules will be dissolved as hydrogen atoms. Part of those hydrogen atoms wi
In this dissertation, a series of Schottky contact-type hydrogen sensors are proposed. By using the catalytic metals (Pd or Pt) as the gate materials, the hydrogen molecules will be dissolved as hydrogen atoms. Part of those hydrogen atoms wi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/66388166434655362685
Autor:
Yan-Ying Tsai, 蔡衍穎
92
Since the hydrogen mechanism with Schottky contact has been proposed, the concerning semiconductor-type hydrogen sensors are extensively fabricated and demonstrated. In this thesis, two different types of electronic devices as hydrogen sensor
Since the hydrogen mechanism with Schottky contact has been proposed, the concerning semiconductor-type hydrogen sensors are extensively fabricated and demonstrated. In this thesis, two different types of electronic devices as hydrogen sensor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/72951537219762571347
Autor:
Huey-Ing Chen, Kun-Wei Lin, Yan-Ying Tsai, Wen-Chau Liu, Ching-Wen Hung, Tzu-Pin Chen, Kuei-Yi Chu, Tsung-Han Tsai, Li-Yang Chen
Publikováno v:
Sensors and Actuators B: Chemical. 133:128-134
An interesting Pd/Al 0.24 Ga 0.76 As-based field-effect-transistor-type hydrogen detector is fabricated and studied. The corresponding electronic and hydrogen sensing properties are measured and investigated. Based on the measured results, a hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0802829240befc930836d75b25da361
https://doi.org/10.1016/j.snb.2008.01.058
https://doi.org/10.1016/j.snb.2008.01.058
Publikováno v:
Sensors and Actuators B: Chemical. 132:587-592
Based on a GaAs-based heterostructure field-effect transistor (HFET) equipped with a catalytic Pd gate, an interesting Pd/GaAs transistor-type hydrogen sensor is fabricated and studied. A simple model is used to elucidate the on-state and off-state b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c23ca61b1d783d96004a331900489e06
https://doi.org/10.1016/j.snb.2007.11.028
https://doi.org/10.1016/j.snb.2007.11.028
Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor
Autor:
Tsung-Han Tsai, Li-Yang Chen, Kuei-Yi Chu, Huey-Ing Chen, Tzu-Pin Chen, Ching-Wen Hung, Yan-Ying Tsai, Wen-Chau Liu
Publikováno v:
Sensors and Actuators B: Chemical. 128:574-580
By combining the advantages of a catalytic Pt metal with an InAlAs material system, an interesting hydrogen sensor is fabricated and demonstrated. The Pt/InAlAs Schottky diode-type sensor exhibits high sensing performance toward hydrogen gas. A compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ea909beedcadd2a20802541b9cce97
https://doi.org/10.1016/j.snb.2007.07.034
https://doi.org/10.1016/j.snb.2007.07.034
Autor:
Kun-Wei Lin, Huey-Ing Chen, Ching Wen Hung, Tzu Pin Chen, Wen-Chau Liu, Tsung-Han Tsai, Yan Ying Tsai
Publikováno v:
Physica Scripta. :345-348
On the basis of Pt/InAlAs metal?semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34c6759945aca525c10016266c158fac
https://doi.org/10.1088/0031-8949/2007/t129/076
https://doi.org/10.1088/0031-8949/2007/t129/076
Autor:
Ching-Wen Hung, Rong-Chau Liu, Kun-Wei Lin, Wen-Chau Liu, Po-Hsien Lai, Huey-Ing Chen, Ssu-I Fu, Yan-Ying Tsai, Tzu-Pin Chen
Publikováno v:
Sensors and Actuators B: Chemical. 125:22-29
A hydrogen sensor based on the Pd/GaAs pseudomorphic high electron mobility transistor (PHEMT) is fabricated and investigated under various hydrogen concentrations in air and N2 environments. Experimentally, in nitrogen (air) ambiances, the studied s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0df6da018c920648bcd0c83e9a03e0e
https://doi.org/10.1016/j.snb.2007.01.027
https://doi.org/10.1016/j.snb.2007.01.027
Autor:
Ching Wen Hung, Huey-Ing Chen, Po Hsien Lai, Kun-Wei Lin, Hung-Chi Chang, Tzu Pin Chen, Wen-Chau Liu, Ssu I. Fu, Yan Ying Tsai
Publikováno v:
Sensors and Actuators B: Chemical. 124:549-556
Based on a Pd/oxide/AlGaAs pseudomorphic high-electron-mobility transistor (PHEMT) structure, an interesting three-terminal-controlled field-effect resistive hydrogen sensor is fabricated and studied. The influences of gate-source bias (VGS) on the h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e6bef79e1ad8f45672193604eab818
https://doi.org/10.1016/j.snb.2007.01.019
https://doi.org/10.1016/j.snb.2007.01.019
Autor:
Yan-Ying Tsai, Hung-Chi Chang, Huey-Ing Chen, Wen-Chau Liu, Ssu-I Fu, Ching-Wen Hung, Po-Hsien Lai
Publikováno v:
Sensors and Actuators B: Chemical. 124:535-541
Interesting hydrogen-sensing properties of catalytic Pt/In0.5Al0.5P metal-oxide–semiconductor (MOS) and metal–semiconductor (MS) Schottky diodes are comprehensively studied and compared. The effects of hydrogen adsorption are investigated on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d6bf655aba6eeb51c7109bad9c3c9c
https://doi.org/10.1016/j.snb.2007.01.017
https://doi.org/10.1016/j.snb.2007.01.017
Autor:
Yan-Ying Tsai, Ssu-I Fu, Tzu-Pin Chen, Hung-Chi Chang, Ching-Wen Hung, Po-Hsien Lai, Huey-Ing Chen, Wen-Chau Liu
Publikováno v:
IEEE Transactions on Electron Devices. 54:1224-1231
A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f9d0c76351d6caf19d46d7b726690c
https://doi.org/10.1109/ted.2007.893813
https://doi.org/10.1109/ted.2007.893813