Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yan-Xiang Luo"'
Autor:
Yan-Xiang Luo, 羅彥翔
97
The standard floating gate Flash cells is the mainstream nonvolatile semiconductor memory. The challenges to future scaling are imposed by the non-scalable tunneling oxide and high voltage to provide sufficient drain-side hot electron injecti
The standard floating gate Flash cells is the mainstream nonvolatile semiconductor memory. The challenges to future scaling are imposed by the non-scalable tunneling oxide and high voltage to provide sufficient drain-side hot electron injecti
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97333038717092396795
Publikováno v:
Microelectronics Reliability. 55:74-80
This study experimentally examines the reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories. Unique Schottky barrier junctions strongly enhance hot-carrier generation, ensuring high-speed multi-level program
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a007b32569522958f1e79edbfc1135f1
https://doi.org/10.1016/j.microrel.2014.09.004
https://doi.org/10.1016/j.microrel.2014.09.004
Autor:
Chun-Hsing Shih, Yan-Xiang Luo
Publikováno v:
IEEE Transactions on Electron Devices. 61:1361-1368
This paper numerically elucidates the effects of dopant-segregated (DS) profiles on the cell operations for Schottky barrier charge-trapping Flash memories. Various DS profiles were employed to examine the cell conduction, programming, and erasing. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31462aa41bf486a00742a6e8420c8b89
https://doi.org/10.1109/ted.2014.2311100
https://doi.org/10.1109/ted.2014.2311100
Publikováno v:
IEEE Transactions on Nanotechnology. 12:760-765
A localized two-bit/cell silicon nanowire silicon-oxide-nitride-oxide-silicon memory is experimentally presented for the use in future multibit/cell or NOR Flash applications. Instead of conventional channel-hot-electron programming used in charge-tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a313fba76dc144d327d67b4d174512e
https://doi.org/10.1109/tnano.2013.2273536
https://doi.org/10.1109/tnano.2013.2273536
Publikováno v:
IEEE Transactions on Electron Devices. 59:1599-1606
Using unique ambipolar conduction, a Schottky barrier multibit cell can be programmed using source-side electron injection and can be erased reversely using drain-side hole compensation. This paper numerically discusses the particular reading operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb0b5f31a4cb63e34791435c3f5c6016
https://doi.org/10.1109/ted.2012.2190514
https://doi.org/10.1109/ted.2012.2190514
Autor:
Riichiro Shirota, Su Lu, Ming-Kun Huang, Chun-Hsing Shih, Yan-Xiang Luo, Sau-Mou Wu, Wei Chang, Ji-Ting Liang, A Wang, Chiu-Tsung Huang, Nguyen Dang Chien, Chenhsin Lien, Wen-Fa Wu
Publikováno v:
IEEE Transactions on Electron Devices. 58:1257-1263
The edge encroachment of tunnel oxide is experimentally found to degrade the Fowler-Nordheim (FN) tunneling gate current of NAND-type Flash cells. This work elucidates the impact of edge encroachment on FN tunneling current for use in programming and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::532afbdc317724cea4104c8b8c0d0960
https://doi.org/10.1109/ted.2011.2105492
https://doi.org/10.1109/ted.2011.2105492
Publikováno v:
NVMTS
This work numerically elucidates the effects of dopant-segregated layers on the cell window in multi-bit Schottky barrier charge-trapping cells. Successive injection-trapping iteration analysis was performed to properly study the coupling of trapped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5830dd1a4ac96d657ce7574e412a88f
https://doi.org/10.1109/nvmts.2015.7457482
https://doi.org/10.1109/nvmts.2015.7457482
Publikováno v:
2015 15th International Workshop on Junction Technology (IWJT).
Unique drain-controlled ambipolar conduction and hot-hole injection were reported in Schottky barrier charge-trapping cell devices. This work numerically elucidated the particular hole conduction and associated hot-hole injection that were sorely ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b2688a8f27a68908ce590a28facdef
https://doi.org/10.1109/iwjt.2015.7467102
https://doi.org/10.1109/iwjt.2015.7467102
Autor:
Yan-Xiang Luo, Jr-Jie Tsai, Ming-Kun Huang, Ruei-Kai Shia, Wen-Fa Wu, Wei Chang, Nguyen Dang Chien, Ji-Ting Liang, Chenhsin Lien, Chun-Hsing Shih
Publikováno v:
IEEE Electron Device Letters. 32:1477-1479
A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a201b37305fdd602dfd882f4abb3a271
https://doi.org/10.1109/led.2011.2164510
https://doi.org/10.1109/led.2011.2164510
Publikováno v:
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.
This paper presents experimentally a novel Schottky barrier (SB) silicon nanowire charge-trapping memory with low-voltage operations and excellent reliability. The unique SB source/drain junctions are utilized to produce strong enhancements of hot-el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa83917b81594eaac75e1a0a1c07c13
https://doi.org/10.1109/icsict.2012.6467580
https://doi.org/10.1109/icsict.2012.6467580