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pro vyhledávání: '"Yan-Wun Chen"'
Publikováno v:
Engineering Science and Technology, an International Journal, Vol 19, Iss 2, Pp 888-893 (2016)
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (
Externí odkaz:
https://doaj.org/article/c662fbaacfa04e48909a8eec02091137
Autor:
Yan-Wun Chen, 陳彥汶
98
In this paper,We design circuits which base on negative-differential-resistance(NDR) devices,NDR device is composed of metal-oxide semiconductor field effect transistor (MOSFET) and hetero junction-bipolar-transistor(HBT)。N NDR devices
In this paper,We design circuits which base on negative-differential-resistance(NDR) devices,NDR device is composed of metal-oxide semiconductor field effect transistor (MOSFET) and hetero junction-bipolar-transistor(HBT)。N NDR devices
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00181146039677113088
Autor:
Yan-wun Chen, 陳彥文
95
In our study, aluminum-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by RF magnetron co-sputtering method using two separate metallic targets of Zn and Al in an Ar/O2 atmosphere at different substrate temperatures ra
In our study, aluminum-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by RF magnetron co-sputtering method using two separate metallic targets of Zn and Al in an Ar/O2 atmosphere at different substrate temperatures ra
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/37643216646271809208
Publikováno v:
Scipedia Open Access
Scipedia SL
Engineering Science and Technology, an International Journal, Vol 19, Iss 2, Pp 888-893 (2016)
Scipedia SL
Engineering Science and Technology, an International Journal, Vol 19, Iss 2, Pp 888-893 (2016)
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9adeadc66284bee4a832ccfcb6c8c8f6
https://www.scipedia.com/public/Gan_et_al_2016a
https://www.scipedia.com/public/Gan_et_al_2016a
Publikováno v:
European Journal of Organic Chemistry. 2011:7288-7293
The synthesis of CuO catalysts supported on mesoporous silica derived from rice husks and semiconductor copper from chemical mechanical planarization (Cu-CMP) wastewater is described. These catalysts are active for the coupling reaction of CsOH with
Publikováno v:
Solid-State Electronics. 54:1637-1640
This paper demonstrates a concise and novel voltage-controlled multiple-valued logic (MVL) design using the standard BiCMOS technique. This MVL circuit is constructed by a voltage-controlled negative differential resistance (NDR) circuit, which is in
Publikováno v:
IEICE Transactions on Information and Systems. :2068-2072
The paper demonstrates a novel multiple-valued logic (MVL) design using a three-peak negative differential resistance (NDR) circuit, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojuncti
Publikováno v:
ChemInform. 43
The new copper catalyst is prepared from semiconductor copper from chemical mechanical planarization wastewater and silica derived from rice husks by hydroxide-precipitation and hydrothermal treatment at 100°C followed by calcination at 600°C in ai
Publikováno v:
ChemInform. 41
Novel CuO on mesoporous silica is prepared under a convenient approach, and has been shown to be an efficient catalyst for cross-coupling reactions of thiols with aryl iodides with only 1.0–5.0 mol% catalyst loading.
Publikováno v:
Chemical communications (Cambridge, England). 46(2)
Novel CuO on mesoporous silica is prepared under a convenient approach, and has been shown to be an efficient catalyst for cross-coupling reactions of thiols with aryl iodides with only 1.0–5.0 mol% catalyst loading.