Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yan-Min Liao"'
Autor:
Zohauddin Ahmad, Yan-Min Liao, Sheng-I Kuo, You-Chia Chang, Rui-Lin Chao, Naseem, Yi-Shan Lee, Yung-Jr Hung, Huang-Ming Chen, Jyehong Chen, Jiun-In Guo, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 9, Pp 85661-85671 (2021)
In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52Al0.48As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplic
Externí odkaz:
https://doaj.org/article/a3020b191ee64b2ca284057f3d39c2de
Autor:
Naseem, Zohauddin Ahmad, Yan-Min Liao, Rui-Lin Chao, Po-Shun Wang, Yi-Shan Lee, Sean Yang, Sheng-Yun Wang, Hsiang-Szu Chang, Hung-Shiang Chen, Jack Jia-Sheng Huang, Emin Chou, Yu-Heng Jan, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 4, p 98 (2021)
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Externí odkaz:
https://doaj.org/article/ba4f992a877141209d623481cb3d3b35
Autor:
Zohauddin Ahmad, Jack Jia-Sheng Huang, Jin-Wei Shi, Sheng-Yun Wang, Yu-Heng Jan, Naseem, H. S. Chen, Hsiang-Szu Chang, Yan-Min Liao, Po-Shun Wang, Emin Chou, Sean Yang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
In this work, a novel In0.52Al0.48As based top-illuminated avalanche photodiode (APD) is demonstrated. By combining the composite charge-layer design with a special p-side up etched mesa structure to zero the electric (E)-field at the periphery of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48011ef12f5066d378800def6d55f441
https://doi.org/10.1109/jstqe.2021.3111895
https://doi.org/10.1109/jstqe.2021.3111895
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-7
We carry out an In0.53Ga0.47As/In0.52Al0.48As single photon avalanche diode which exhibits a single photon detection efficiency exceeding 60% at 1310 nm and neat temporal characteristic of 65 ps. A novel concept of dual multiplication layer is incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c34663aa80e78c3ad58044ea308470
https://doi.org/10.1109/jstqe.2021.3114130
https://doi.org/10.1109/jstqe.2021.3114130
Autor:
You-Chia Chang, Rui-Lin Chao, Naseem, H. S. Chen, Sheng-I Kuo, Jiun-In Guo, Yan-Min Liao, Yung-Jr Hung, Jyehong Chen, Zohauddin Ahmad, Yi-Shan Lee, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 9, Pp 85661-85671 (2021)
In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52Al0.48As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0dff5d82f4785eceea9fd599838e5b49
https://ieeexplore.ieee.org/document/9453831/
https://ieeexplore.ieee.org/document/9453831/
Autor:
Hung Shiang Chen, Emin Chou, Sheng Yun Wang, Yi Shan Lee, Naseem, Jack Jia Sheng Huang, Yu Heng Jan, Zohauddin Ahmad, Sean Yang, Po Shun Wang, Yan Min Liao, Hsiang Szu Chang, Rui Lin Chao, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 98, p 98 (2021)
Photonics
Volume 8
Issue 4
Photonics
Volume 8
Issue 4
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::869737605f06a726712e3cc4de06c264
https://www.mdpi.com/2304-6732/8/4/98
https://www.mdpi.com/2304-6732/8/4/98
Publikováno v:
OSA Optical Sensors and Sensing Congress 2021 (AIS, FTS, HISE, SENSORS, ES).
The performance of InGaAs/InAlAs single photon avalanche diodes (SPAD) was improved with fabrication in triple mesa. Current SPADs achieve better dark count rate of 5 × 104 ⁄2 for single photon detection efficiency of 31% at RT.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd9effd8562dbc2aaec2e716069d6e8c
https://doi.org/10.1364/sensors.2021.stu1b.4
https://doi.org/10.1364/sensors.2021.stu1b.4
Autor:
Yan-Min Liao, Rui-Lin Chao, Jin-Wei Shi, Zohauddin Ahmad, Naseem Naseem, Yi-Shan Lee, You-Chia Chang, Sheng-I Kuo
Publikováno v:
OFC
Dual multiplication-layers APDs with large bandwidth-responsivity product (460GHz-A/W), saturation-current (>10mA), and IF-power (+4.5dBm) are demonstrated in self-heterodyne FWCW lidar systems with ~285% modulation depths. Constructed images show 9.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20491f07ed11fcb7a65deeeeb54a8a8b
https://doi.org/10.1364/ofc.2021.f2c.7
https://doi.org/10.1364/ofc.2021.f2c.7