Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yan-Lin Tsai"'
Autor:
Yan-Lin Tsai, 蔡嬿琳
106
The purpose of this paper is to explore the factors of the intention to use virtual reality devices. In this study, a research model based on perceived value was developed and proposed. The factors included perceived benefits (flow、spatial
The purpose of this paper is to explore the factors of the intention to use virtual reality devices. In this study, a research model based on perceived value was developed and proposed. The factors included perceived benefits (flow、spatial
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/29z6wg
Publikováno v:
Japanese Journal of Applied Physics. 55:08PD04
The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9f25e356021d07aca65144f61e65e5f
https://doi.org/10.7567/jjap.55.08pd04
https://doi.org/10.7567/jjap.55.08pd04
Autor:
Hao Tang Hsu, Hann Ping Hwang, Chun Po Chang, Yu Ming Liu, Jone F. Chen, Yan Lin Tsai, Chih Yuan Chen
Publikováno v:
Japanese Journal of Applied Physics. 55:01AD03
In this study, off-state breakdown voltage (V BD) and hot-carrier-induced degradation in high-voltage n-type metal–oxide–semiconductor transistors with various BF2 implantation doses in the n− drift region are investigated. Results show that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b40293fc05b7da404ddd77208360dfb0
https://doi.org/10.7567/jjap.55.01ad03
https://doi.org/10.7567/jjap.55.01ad03
Publikováno v:
Japanese Journal of Applied Physics; Aug2016, Vol. 55 Issue 8S2, p1-1, 1p