Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yan-Kui Liang"'
Autor:
Jui-Sheng Wu, Chih-Chieh Lee, Chia-Hsun Wu, Cheng-Jun Huang, Yan-Kui Liang, You-Chen Weng, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 525-531 (2022)
E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro
Externí odkaz:
https://doaj.org/article/f3a4607ba5154f818ba8962e4aac7995
Autor:
Yan-Kui Liang, Jing-Wei Lin, Li-Chi Peng, Yi Miao Hua, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Sai Hooi Yeong, Yu-Ming Lin, Po-Tsun Liu, Edward-Yi Chang, Chun-Hsiung Lin
Publikováno v:
IEEE Transactions on Electron Devices. 70:1067-1072
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4ac72da8495813643d76612e97fe09
https://doi.org/10.1109/ted.2022.3232476
https://doi.org/10.1109/ted.2022.3232476
Autor:
Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 43:2105-2108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1025c069493b75abac9c7905ee2af4ff
https://doi.org/10.1109/led.2022.3216620
https://doi.org/10.1109/led.2022.3216620
Autor:
Tsung-Ying Yang, Huuan-Yao Huang, Yan-Kui Liang, Jui-Sheng Wu, Mei-Yan Kuo, Kuan-Pang Chang, Heng-Tung Hsu, Edward-Yi Chang
Publikováno v:
IEEE Electron Device Letters. 43:1629-1632
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc7396802a48a4620c3617ae68f9c78
https://doi.org/10.1109/led.2022.3201900
https://doi.org/10.1109/led.2022.3201900
Autor:
Yan-Kui Liang, Wei-Li Li, Yong-Jyun Wang, Li-Chi Peng, Chun-Chieh Lu, Huai-Ying Huang, Sai Hooi Yeong, Yu-Ming Lin, Ying-Hao Chu, Edward-Yi Chang, Chun-Hsiung Lin
Publikováno v:
IEEE Electron Device Letters. 43:1451-1454
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249dfed6780dd69102396a36b4138763
https://doi.org/10.1109/led.2022.3193383
https://doi.org/10.1109/led.2022.3193383
Autor:
Yan-Kui Liang, June-Yang Zheng, Jing-Wei Lin, Yi Miao Hua, Tsung-Te Chou, Chun-Chieh Lu, Huai-Ying Huang, Yu-Ming Lin, Chi-Chung Kei, Edward-Yi Chang, Chun-Hsiung Lin
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4ba8a2214de2f194321652396483658
https://doi.org/10.1109/edtm55494.2023.10103052
https://doi.org/10.1109/edtm55494.2023.10103052
Autor:
Yan-Kui Liang, Yi-Shuo Huang, Li-Chi Peng, Tsung-Ying Yang, Bo-Feng Young, Chun-Chieh Lu, Sai Hooi Yeong, Yu-Ming Lin, Chun-Jung Su, Edward-Yi Chang, Chun-Hsiung Lin
Publikováno v:
IEEE Transactions on Nanotechnology. 21:328-331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a937beaf4f92c5c5236658635e4897
https://doi.org/10.1109/tnano.2022.3187589
https://doi.org/10.1109/tnano.2022.3187589
Autor:
Tsung-Che Chiang, Po-Tsun Liu, Yu Chen, Edward Yi Chang, Jing-Wei Lin, Yan-Kui Liang, Zhen-hao Li, Chun-Hsiung Lin
Publikováno v:
ECS Transactions. 104:31-34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57498dea4ba74d8726979a18b75fcd39
https://doi.org/10.1149/10403.0031ecst
https://doi.org/10.1149/10403.0031ecst
Autor:
Yan-Kui Liang, Jui-Sheng Wu, Edward Yi Chang, Chun-Jung Su, Hua-Lun Ko, Chun-Hsiung Lin, Chih-Yu Teng, Quang Ho Luc
Publikováno v:
IEEE Electron Device Letters. 42:1299-1302
In this letter, 5 nm-thick HZO ultra-thin ferroelectric capacitors with excellent remanent polarization ( $\text{P}_{\mathrm {r}}$ ) and reliability are presented. The TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack was deposited consecut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8439922a34b1ac1a0417bffc0f8e4d
https://doi.org/10.1109/led.2021.3102604
https://doi.org/10.1109/led.2021.3102604
Autor:
Yan-Kui Liang, Jing-Wei Lin, Yi-Shuo Huang, Wei-Cheng Lin, Bo-Feng Young, Yu-Chuan Shih, Chun-Chieh Lu, Sai Hooi Yeong, Yu-Ming Lin, Po-Tsun Liu, Edward Yi Chang, Chun-Hsiung Lin
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:053012
In this work, we investigated the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitors on various refractory electrodes, including TiN, TaN, W, and Mo. By comparing different electrodes and annealing temperature,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::292b26ab1d9b4e776a1ce7c4e21bbb43
https://doi.org/10.1149/2162-8777/ac6f1c
https://doi.org/10.1149/2162-8777/ac6f1c