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pro vyhledávání: '"Yan-Jing He"'
Akademický článek
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Autor:
Karwatowska‑Prokopczuk, Ewa, Lesogor, Anastasia, Yan, Jing-He, Hurh, Eunju, Hoenlinger, Angelika, Margolskee, Alison, Xia, Shuting, Tsimikas, Sotirios
Publikováno v:
In Journal of Clinical Lipidology January-February 2023 17(1):181-188
Autor:
Stacy, Rebecca, Huttner, Kenneth, Watts, Jen, Peace, James, Wirta, David, Walters, Tom, Sall, Kenneth, Seaman, John, Ni, Xiao, Prasanna, Ganesh, Mogi, Muneto, Adams, Christopher, Yan, Jing-He, Wald, Michael, He, Yunsheng, Newton, Ronald, Kolega, Randall, Grosskreutz, Cynthia
Publikováno v:
In American Journal of Ophthalmology August 2018 192:113-123
Publikováno v:
In Toxicology and Applied Pharmacology 15 February 2014 275(1):36-43
Autor:
Xiaoyan Tang, Qing Wen Song, Yuming Zhang, Yan Jing He, Zhi Qiang Bai, Yi Men Zhang, Yi Fan Jia, Chao Han
Publikováno v:
Materials Science Forum. 954:144-150
Even with SiC power MOSFETs released into the commercial market, the threshold voltage instability caused by near interface states is still an attracting issue, which is a major obstacle to further improving the device performance. In this paper, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25d739a8d4c80c7b2de2b7557355e8fb
https://doi.org/10.4028/www.scientific.net/msf.954.144
https://doi.org/10.4028/www.scientific.net/msf.954.144
Publikováno v:
Materials Science Forum. 924:667-670
P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18747fcebf5d1a7dcd4a6c73445a7b3c
https://doi.org/10.4028/www.scientific.net/msf.924.667
https://doi.org/10.4028/www.scientific.net/msf.924.667
Autor:
Yan, Jing‐He1 jing-he.yan@novartis.com
Publikováno v:
Clinical Pharmacology in Drug Development. Jul/Aug2017, Vol. 6 Issue 4, p323-330. 8p.
Autor:
Hong Liang Lv, Yi Men Zhang, Xiaoyan Tang, Qing Wen Song, Chao Han, Yi Meng Zhang, Yuming Zhang, Yan Jing He
Publikováno v:
Solid-State Electronics. 129:175-181
A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b01bd615496b4e64052712c76d4853e
https://doi.org/10.1016/j.sse.2016.11.008
https://doi.org/10.1016/j.sse.2016.11.008
Akademický článek
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Publikováno v:
Frontiers in Pharmacology, Vol 8 (2017)
Frontiers in Pharmacology
Frontiers in Pharmacology
Background: Considerable studies showed associations between chronic obstructive pulmonary disease (COPD) and cardiovascular disease (CVD), we evaluated the role of endogenous hydrogen sulfide (H2S) / homocysteine (Hcy) in patients with COPD combined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a88ae1f4378803c7ed5e30efbf9944b
http://journal.frontiersin.org/article/10.3389/fphar.2017.00624/full
http://journal.frontiersin.org/article/10.3389/fphar.2017.00624/full