Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yan Xiao Zhao"'
Autor:
Wanrong Zhang, Yan-Xiao Zhao, Zhang Lianghao, Liu Shuo, Liang Chen, Hongyun Xie, Jiang Zhiyun
Publikováno v:
Microelectronics Journal. 46:626-631
A dual-band variable gain amplifier operating at 0.9GHz and 2.4GHz was designed based on high performance RF SiGe HBT for large amount of signals transmission and analysis. Current steering was adopted in gain-control circuit to get variable trans-co
Publikováno v:
Key Engineering Materials. :646-652
A second order differential filter with Q-enhancement and tunable active inductor is presented. The design technique for a tunable Q-enhancement SiGe HBT active inductor operating in the wide RF-band for the filter is described. Multi-regulated Casco
Autor:
Yan-Xiao Zhao, Liu Yaze, Liu Shuo, Wanrong Zhang, Chen Jitian, Hongyun Xie, Cheng-xiao Du, Dongyue Jin, Huang Xin
Publikováno v:
2016 IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB).
A low power variable gain wideband low noise amplifier (LPVG-LNA) was designed in this paper by using active inductor and multiple current reuse circuit structures. At the input stage of LPVG-LNA, a noise canceling structure and an active inductor we
Publikováno v:
Microelectronics Journal. 44:315-320
An inductorless Cascode SiGe low noise amplifier (LNA) that achieves high linearity using tunable active feedback and post-linearization technique is proposed for ultra-wideband (UWB) application. Tunable active feedback composed of NMOS and parallel
Publikováno v:
Physics Procedia. 22:252-257
Design procedure of large blow moulding machine rack is discussed in the article. A strength checking method is presented. Finite element analysis is conducted in the design procedure by ANSYS software. The actual situation of the rack load bearing i
Publikováno v:
Chinese Physics B. 25:124401
The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried lay
Publikováno v:
Chinese Physics B. 25:038501
The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance Ls, quality factor Q, and self-re
Autor:
Xin Huang, Wan-Rong Zhang, Dong-Yue Jin, Hong-Yun Xie, Yan-Xiao Zhao, Ji-Tian Chen, Ya-Ze Liu, Shuo Liu
Publikováno v:
2016 IEEE International Conference on Microwave & Millimeter Wave Technology (ICMMT); 2016, p508-510, 3p
Publikováno v:
Chinese Physics B. 23:114402
As is well known, there exists a tradeoff between the breakdown voltage BVCEO and the cut-off frequency fT for a standard heterojunction bipolar transistor (HBT). In this paper, this tradeoff is alleviated by collector doping engineering in the SiGe
Publikováno v:
Chinese Physics B; Dec2016, Vol. 25 Issue 12, p1-1, 1p