Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yan Hui Xing"'
Publikováno v:
Key Engineering Materials. 538:320-323
We propose a simple technique to improve the light extraction efficiency of 650nm AlGaInP/GaInP resonant cavity light emitting diodes (RCLEDs) by using nanoscale textured-ZnO window layer. This layer was performed using a hydrothermal synthesis metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceee153123d1c42eda0e1be788ee2254
https://doi.org/10.4028/www.scientific.net/kem.538.320
https://doi.org/10.4028/www.scientific.net/kem.538.320
Publikováno v:
Applied Surface Science. 255:6121-6124
GaN layer on c-plane misoriented sapphire, grown by metal organic chemical vapor deposition, has been studied. It was observed that the random and non-uniform distribution of the step was caused by the step reconstruction for GaN grown on 0° sapphir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b1d8322283f2f155efeb81dac851706
https://doi.org/10.1016/j.apsusc.2009.01.063
https://doi.org/10.1016/j.apsusc.2009.01.063
Autor:
Jianjun Li, Yan-hui Xing, Wei-zhi Lin, Jun Deng, Xiao-dong Yu, Ying Liu, Guangdi Shen, Jun Han
Publikováno v:
Optoelectronics Letters. 3:417-419
The LED with DBR and enhancing transmission film was grown by MOCVD. At 20 mA DC injection current, the LED peak wavelength was 623 nm, the light intensity was 200 mcd, and the output light power was 2.14 mW. The light intensity and output light powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20658b33bc8c6248fb18a87392df5ee9
https://doi.org/10.1007/s11801-007-7054-7
https://doi.org/10.1007/s11801-007-7054-7
Autor:
Xiao-dong Yu, Yan-hui Xing, Guangdi Shen, Jianjun Li, Wei-zhi Lin, Jun Han, Jun Deng, Ying Liu
Publikováno v:
Optoelectronics Letters. 3:420-422
The coupled DBR LED with one DBR for reflecting normal incidence light and the other for reflecting inclined incidence light has been grown by MOCVD. For improving the conventional DBR which was used to increase light extraction efficiency in AlGaInP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::701ad1f3fbc2e19a6e843a80bcaaa331
https://doi.org/10.1007/s11801-007-7078-z
https://doi.org/10.1007/s11801-007-7078-z
Autor:
Jun Deng, Nan-hui Niu, Huai-bing Wang, Jianping Liu, Yan-hui Xing, Jun Han, Guangdi Shen, Nai-xin Liu
Publikováno v:
Optoelectronics Letters. 3:1-3
InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated. The experimental results show that the growth interruption can improve the interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce487c1e16c591cac1e91b4f61404c2d
https://doi.org/10.1007/s11801-007-6116-1
https://doi.org/10.1007/s11801-007-6116-1
Publikováno v:
Chinese Physics B; Jun2016, Vol. 25 Issue 6, p1-1, 1p