Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yan Gang He"'
Publikováno v:
Advanced Materials Research. :1149-1152
With low-k dielectric materials taking the place of oxide dielectrics as the primary dielectric materials, the low-k dielectric materials and interconnection Cu metals during Chemical Mechanical Planarization (CMP) is becoming a critical surface qual
Publikováno v:
Advanced Materials Research. :1145-1148
With the microelectronic technology node moves down to 45 nm and beyond, and to reduce the RC delay time, low-k dielectric materials have been used to replace regular dielectric materials. Therefore, the down force of chemical mechanical planarizatio
Defectivity Reduction in the Silicon Tough Polishing with Polyamine and Nonions Surfactant Additives
Autor:
Na Wang, Bai Mei Tan, Bao Hong Gao, Yu Ling Liu, Yan Gang He, Juan Wang, Ming Sun, Xin Huan Niu
Publikováno v:
Advanced Materials Research. :390-394
The effects of the polyamine chelating agent and nonions surfactant additive on the surface defectivity reduction in the final polishing of the mono silicon wafers were investigated using high-purity nano colloidal silica based organic alkaline slurr
Publikováno v:
Advanced Materials Research. :1621-1624
As the integrated circuits developing, the line-width and space between the metal interconnection are shrinking. This increases the RC time delay. To reduce the RC time delay, the low dielectric constant (low-k) material was introduced in the ICs. Fo
Publikováno v:
Advanced Materials Research. :3020-3023
Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity
Publikováno v:
Advanced Materials Research. :2284-2287
Along with the feature size reducing and the increase of integration level rapidly in ULSI,the request for metal impurities contamination on silicon substrate surface appears specially rigorous. In this paper the chelating agent was added in cleani
Publikováno v:
Advanced Materials Research. :1137-1140
Indium antimony(InSb) is one of the important materials which can be used to make semiconductor devices such as infrared detection device. Due to the low hardness and great brittleness, the surface scratching always appears and surface roughness is h
Autor:
Yu Ling Liu, Rui Shi, Xiao Wei Gan, Xin Huan Niu, Jia Xi Wang, Yan Gang He, Bai Mei Tan, Ming Sun
Publikováno v:
Advanced Materials Research. :2275-2278
Chemical mechanical planarization (CMP) of Cu pattern wafer based alkaline Cu slurry in GLSI was investigated. The performance of Cu removal rate and dishing condition were discussed in this paper. Different formation of alkali CMP slurry (Cu1 and Cu
Publikováno v:
Applied Mechanics and Materials. :1340-1344
Since almost all large die surfaces are free-form surfaces, currently, these are mostlty manually polished. In order to overcome this barrier, floating face polishing is a feasible polishing technology. The polishing force is a key problem of floatin
Publikováno v:
Advanced Materials Research. 135:139-142
Since almost large die surfaces are free-form surfaces, currently, these are almost manually implemented. In order to overcome this barrier, floating polishing is a feasible polishing technology. The contact friction between polishing disk and workpi