Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Yan‐Qiang Cao"'
Autor:
Qiang Ren, Xin‐Yue Zhang, Ji‐An Chen, Jia‐Bin Fang, Tao‐Qing Zi, Lin Zhu, Chang Liu, Min Han, Yan‐Qiang Cao, Ai‐Dong Li
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Highly sensitive and reliable hydrogen detection is prerequisite for the large‐scale implementation of green energy hydrogen. It remains a tough challenge to get a highly selective H2 sensor to low concentration H2 gas with low working tem
Externí odkaz:
https://doaj.org/article/7fae342a470e4963b901eee5179b6112
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-9 (2017)
Abstract Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were
Externí odkaz:
https://doaj.org/article/6926d77060ae42c08cbc599610ab6fc5
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract A simple high-throughput approach is presented in this work to fabricate the Au nanoparticles (NPs)/nanogap/Au NPs structure for surface enhanced Raman scattering (SERS). This plasmonic nanostructure can be prepared feasibly by the combinati
Externí odkaz:
https://doaj.org/article/6e968ae05ec84c25979afbde82f8391f
Autor:
Wei Zhang, Ji-Zhou Kong, Zheng-Yi Cao, Ai-Dong Li, Lai-Guo Wang, Lin Zhu, Xin Li, Yan-Qiang Cao, Di Wu
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-11 (2017)
Abstract The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt a
Externí odkaz:
https://doaj.org/article/dd9dcf15d5fb4525a6e51197079d98c9
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate diel
Externí odkaz:
https://doaj.org/article/bcecfe2a46684caba61bb95dce5aaed5
Publikováno v:
Chinese Medical Journal, Vol 130, Iss 5, Pp 508-515 (2017)
Background: Obesity has an adverse effect on iron status. Hepcidin-mediated inhibition of iron absorption in the duodenum is a potential mechanism. Iron-deficient obese patients have diminished response to oral iron therapy. This study was designed t
Externí odkaz:
https://doaj.org/article/6a0267333e5847328190d9116a6924c6
Publikováno v:
Progress in Natural Science: Materials International, Vol 31, Iss 3, Pp 379-386 (2021)
In this work, a highly stretchable and sensitive strain sensor using silver nanowires (Ag NWs)/multi-walled carbon nanotubes (MWCNTs) on hair band is proposed. The fabrication process of such sensors enabled scalable and facile production with low co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49564e1412aa238e0ef76593cc0fca9d
http://www.sciencedirect.com/science/article/pii/S1002007121000629
http://www.sciencedirect.com/science/article/pii/S1002007121000629
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 51(25)
The conformal coating or surface modification in high aspect ratio nanostructures is a tough challenge using traditional physical/chemical vapor deposition, especially for metal deposition. In this work, the growth behavior of iridium (Ir) metal form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::627e4f227f4031a4443a7b09e92b42d1
https://pubmed.ncbi.nlm.nih.gov/35704906
https://pubmed.ncbi.nlm.nih.gov/35704906
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:4815-4822
Gd and Si co-doped HfO2 gate dielectric thin films were prepared by atomic layer deposition (ALD), while Gd[N(SiMe3)2]3, Hf[NEtMe]4, and H2O are chosen to be precursors. The Gd and Si were successfully co-doped into HfO2 films using only one doping p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30347f9dbf38f65b99c7a70145421f28
https://doi.org/10.1007/s10854-020-05220-7
https://doi.org/10.1007/s10854-020-05220-7