An efficient model algorithm for two-dimensional field-effect transistors

Autor: Yan, Zhao-Yi, Hou, Zhan, Wu, Fan, Zhao, Ruiting, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Xue, Kan-Hao, Liu, Houfang, Tian, He, Yang, Yi, Ren, Tian-Ling

Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipo

Externí odkaz: http://arxiv.org/abs/2303.06926

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors.

Autor: Yan, Zhao‐Yi^1,2 (AUTHOR), Hou, Zhan^1,2 (AUTHOR), Xue, Kan‐Hao^3,4 (AUTHOR) xkh@hust.edu.cn, Tian, He^1,2 (AUTHOR) tianhe88@tsinghua.edu.cn, Lu, Tian^1,2 (AUTHOR), Xue, Junying⁵ (AUTHOR), Wu, Fan^1,2 (AUTHOR), Zhao, Ruiting^1,2 (AUTHOR), Shao, Minghao^1,2 (AUTHOR), Yan, Jianlan^1,2 (AUTHOR), Yan, Anzhi^1,2 (AUTHOR), Wang, Zhenze^1,2 (AUTHOR), Shen, Penghui^1,2 (AUTHOR), Zhao, Mingyue^1,2 (AUTHOR), Miao, Xiangshui^3,4 (AUTHOR), Lin, Zhaoyang⁵ (AUTHOR), Liu, Houfang^1,2 (AUTHOR) houfangliu@tsinghua.edu.cn, Yang, Yi^1,2 (AUTHOR) yiyang@tsinghua.edu.cn, Ren, Tian‐Ling^1,2 (AUTHOR) RenTL@tsinghua.edu.cn

Publikováno v: Advanced Science. Dec2023, Vol. 10 Issue 34, p1-12. 12p.

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Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress.

Autor: Yan, Anzhi, Wang, Chunlin, Yan, Jianlan, Wang, Zhenze, Zhang, Enyi, Dong, Yu, Yan, Zhao‐Yi, Lu, Tian, Cui, Tianrui, Li, Ding, Shen, Penghui, Jin, Yuxin, Liu, Houfang, Yang, Yi, Ren, Tian‐Ling

Publikováno v: Advanced Functional Materials; 1/15/2024, Vol. 34 Issue 3, p1-33, 33p

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