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SiX2(X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications

Autor: Yan, Saichao, Wang, Kang, Guo, Zhixin, Wu, Yu-Ning, Chen, Shiyou

Publikováno v: Nano Letters; May 2024, Vol. 24 Issue: 20 p6158-6164, 7p

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SiX 2 (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.

Autor: Yan S; Key Lab of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, People's Republic of China., Wang K; School of Microelectronics and Key Laboratory of Computational Physical Sciences (MOE), Fudan University, Shanghai 200433, People's Republic of China., Guo Z; State Key Laboratory for Mechanical Behavior of Materials and School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shanxi 710049, People's Republic of China., Wu YN; Key Lab of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200062, People's Republic of China., Chen S; School of Microelectronics and Key Laboratory of Computational Physical Sciences (MOE), Fudan University, Shanghai 200433, People's Republic of China.

Publikováno v: Nano letters [Nano Lett] 2024 May 22; Vol. 24 (20), pp. 6158-6164. Date of Electronic Publication: 2024 May 09.