Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yamagami, Shigeharu"'
Akademický článek
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Autor:
Zhu, Wenqi, Ikari, Takayuki, Lovison, Giorgio, Inoue, Keisuke, Yamagami, Shigeharu, Sekiya, Hiroo
Publikováno v:
IET Power Electronics (Wiley-Blackwell); Aug2021, Vol. 14 Issue 10, p1806-1819, 14p
Autor:
Saito Yuji, Kenta Emori, Marui Toshiharu, Yamagami Shigeharu, Ni Wei, Masakatsu Hoshi, Tetsuya Hayashi
Publikováno v:
Materials Science Forum. :923-926
We demonstrate a SiC trench MOSFET with an integrated low Von unipolar heterojunction diode (MOSHJD). A region of the heterojunction diode (HJD) was fabricated in a trench with p+-type poly-crystalline silicon on an n--type epitaxial layer of 4H-SiC.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce43548d3326b6e95f9fe16c4907774f
https://doi.org/10.4028/www.scientific.net/msf.778-780.923
https://doi.org/10.4028/www.scientific.net/msf.778-780.923
Publikováno v:
Materials Science Forum. :1005-1008
We experimentally investigated a method of controlling the energy barrier height (ΦB) of polycrystalline silicon (poly-Si)/4H-SiC heterojunction diodes (HJDs) and conducted a numerical simulation of a novel low Von and low reverse recovery current d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e34a05b35944832839b2749a919f9080
https://doi.org/10.4028/www.scientific.net/msf.717-720.1005
https://doi.org/10.4028/www.scientific.net/msf.717-720.1005
Autor:
Yukie Hirose, Tetsuya Hayashi, Hideaki Tanaka, Tatsuhiro Suzuki, Yamagami Shigeharu, Masakatsu Hoshi, Satoshi Tanimoto
Publikováno v:
Materials Science Forum. :795-798
It was experimentally shown that an ONO gate dielectric carefully formed on 4H-SiC has extremely high reliability even under a negative electric field at least up to a junction temperature of 300°C, making it promising for power MOS and CMOS applica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::627d0c3a9a9fdecee62245bcda9ea07b
https://doi.org/10.4028/www.scientific.net/msf.600-603.795
https://doi.org/10.4028/www.scientific.net/msf.600-603.795
Autor:
Hideaki Tanaka, Tetsuya Hayashi, Masakatsu Hoshi, Satoshi Tanimoto, Yoshio Shimoida, Yamagami Shigeharu
Publikováno v:
Materials Science Forum. :1453-1456
We demonstrate a novel power Si/4H-SiC heterojunction tunneling transistor (HETT) on the basis of theoretical analysis and experimental results. The HETT is an insulated gate drive device and has a unique switching mechanism. In the off-state, the he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d56e2a157ce579c14c6962941145e3
https://doi.org/10.4028/www.scientific.net/msf.527-529.1453
https://doi.org/10.4028/www.scientific.net/msf.527-529.1453
Autor:
Ni, Wei, Emori, Kenta, Marui, Toshiharu, Saito, Yuji, Yamagami, Shigeharu, Hayashi, Tetsuya, Hoshi, Masakatsu
Publikováno v:
Materials Science Forum; February 2014, Vol. 778 Issue: 1 p923-926, 4p
Publikováno v:
Materials Science Forum; May 2012, Vol. 717 Issue: 1 p1005-1008, 4p
Autor:
Tanimoto, Satoshi, Suzuki, Tatsuhiro, Yamagami, Shigeharu, Tanaka, Hideaki, Hayashi, Tetsuya, Hirose, Yukie, Hoshi, Masakatsu
Publikováno v:
Materials Science Forum; September 2008, Vol. 600 Issue: 1 p795-798, 4p
Autor:
Hayashi, Tetsuya, Shimoida, Yoshio, Tanaka, Hideaki, Yamagami, Shigeharu, Tanimoto, Satoshi, Hoshi, Masakatsu
Publikováno v:
Materials Science Forum; October 2006, Vol. 527 Issue: 1 p1453-1456, 4p