Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics

Autor: Lastovskii, S.B., Gusakov, V. E., Markevich, Vladimir, Peaker, Anthony, Yakushevich, H.S., Korshunov, F. P., Murin, L. I.

Publikováno v: Lastovskii, S B, Gusakov, V E, Markevich, V, Peaker, A, Yakushevich, H S, Korshunov, F P & Murin, L I 2017, ' Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201700262

We present experimental and theoretical results showing that the migration of interstitial carbon atom (Ci) in silicon depends on its charge state. The experimental results were obtained from the analysis of changes in concentrations of the Ci defect

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