Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Yajie Qiu"'
Autor:
Meng Zhou, Haijiao Liu, Jie Zhang, Guoqiang Li, Hecang Zang, Yajie Qiu, Qing Zhao, Xiuzhong Yang, Jiantao Zhang, Guoqing Zheng
Publikováno v:
International Conference on Computer Graphics, Artificial Intelligence, and Data Processing (ICCAID 2022).
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
GaN transistors have attracted considerable attention from the price-conscious low power application market, such as consumer power, due to their proven high reliability and maturation of their manufacturing. In order to compete with their Si transis
Publikováno v:
2020 IEEE Applied Power Electronics Conference and Exposition (APEC).
GaN E-HEMTs eliminate the inherent parasitic diodes compared to Si MOSFETs and have faster switching speeds and slew rates [1]. These and other improved characteristics of GaN E-HEMTs have reduced system size and weight, have delivered lower system c
Autor:
Yang Chen, Zhihua Alex Yang, Yajie Qiu, Hongliang Wang, Laili Wang, Peng Fang, Yan Zhang, Jahangir Afsharian, Yan-Fei Liu
Publikováno v:
IEEE Transactions on Power Electronics. 33:370-387
In high-power applications, parallel operation is required to improve both efficiency and reliability. In an LLC converter, it is difficult to achieve parallel operation due to the gain sensitivity to component tolerance. This paper proposes a new st
Autor:
Yajie Qiu, Lucas Juncheng Lu
Publikováno v:
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
Compared to Silicon MOSFETs, GaN High-electron-Mobility Transistors (GaN HEMT) features significantly reduced gate charge (Q g ) and output capacitance (C oss ), resulting in lower driving loss and shorter deadtime. Therefore, GaN HEMTs show signific
Publikováno v:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
The operation principles of the full-bridge energy recirculation and storage circuit are explored and extended to evaluate power semiconductors under both soft-switching and hard-switching conditions. Combining frequency varying and phase shifting co
Publikováno v:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
Although LLC topology has been applied to AC-DC power supplies as a Power Factor Correction (PFC) converter in the literature, there is no publications present intuitive equations that simplify LLC designing in order to meet the PFC gain requirements
Publikováno v:
IEEE Transactions on Industry Applications. 51:4677-4687
Nonlinear inductors have wide applications in dc/dc converters. The multiwindow multipermeability nonlinear inductor based on low-temperature co-fired ceramic (LTCC) technology has been proven to have a gradually changing wide-range inductance value
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 3:698-713
Conventional topologies for high-power LED drivers with high power factors (PFs) require large capacitances to limit the low frequency (100 or 120 Hz) LED current ripples. Electrolytic capacitors are commonly used because they are the only capacitors
Publikováno v:
IEEE Transactions on Power Electronics. 29:4426-4437
LLC converters face challenges in high-current applications, where the high conduction loss limits the maximum load capacity and reduces efficiency. Interleaving technique can be used to solve this problem, but the component tolerances of the resonan