Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yair Sofer"'
Autor:
Wang Pei Jen, O. Tirosh, Yi Guan Jiun, K. Danon, Y. Horesh, I. Cohen, R. Sahar, Eduardo Maayan, A. Lavan, B. Eitan, Yi Jing Jing, A. Kushnarenko, Amit Berman, Yan Feng, Y. Betser, R. Eliyahu, Cai En Jing, Yair Sofer, Lin Ching Yao, E. Geyari, Kwon Sung Woo, Kwon Yi Jin, Kim Jong Oh, A. Givant
Publikováno v:
ISSCC
The increasing demand for cost reduction of data storage solutions calls for both cell-size shrink, as well as compressing more bits of data into the storage element. Yet the low cost solution is required to have fast enough write operation to fit de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a24f0fbed94208a487874dcc3dcd0bb
https://doi.org/10.1109/isscc.2008.4523237
https://doi.org/10.1109/isscc.2008.4523237
Publikováno v:
2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
A 256 Mb flash memory based on 2 b/cell 0.17 /spl mu/m NROM technology supports 90 ns random read access, 66 MHz synchronous read, and 3 /spl mu/s/word programming. This 55 mm/sup 2/ device includes an 8 b embedded microcontroller for program and era
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79a2a0c6985ffe36dc10c9522884b80a
https://doi.org/10.1109/isscc.2004.1332587
https://doi.org/10.1109/isscc.2004.1332587
Publikováno v:
ISCAS (1)
Charge pumps are useful to achieve on-chip boosted voltages in EPROM and other NVM devices. A new capacitive charge pump architecture is suggested which eliminates bulk effect by boosting the wells of transistors in the charge pump stages. In additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684fad4d1188bdd4234f3b1d58875b4f
https://doi.org/10.1109/iscas.2003.1205545
https://doi.org/10.1109/iscas.2003.1205545
Publikováno v:
ISCAS (4)
A new regulator concept is described which is based on stacked diode-connected transistors rather that resistor based voltage dividers. The circuit provides an accurate voltage which is driven to a capacitive load by a class AB driver. The regulator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15a112919ea0e8095e04a3bff89bb35d
https://doi.org/10.1109/iscas.2002.1010521
https://doi.org/10.1109/iscas.2002.1010521
Autor:
Dirk Caspary, D. Avni, M. Meyassed, Joseph Shor, Herbert Palm, S. Riedel, P. Haibach, Yair Sofer, Y. Polansky, Eduardo Maayan, Z. Cohen, B. Eitan, R. Knofler, E.S. v Kamienski, Y. Alpern, I. Bloom, R. Dvir
Publikováno v:
Scopus-Elsevier
The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::121c37f58800871f14926f2f23ddbed6
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036224246&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036224246&partnerID=MN8TOARS
