Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Yair Eran"'
Autor:
Chung ki Lyu, Chan-Uk Jeon, Hong Yul Jung, In-Yong Kang, Yair Eran, Gi Sung Yoon, Sang Hoon Han, Alexander Chereshnya, Yulia Brand, Yoad Bar-Shean, Sun Pyo Lee, Dong-Hoon Chung
Publikováno v:
SPIE Proceedings.
EUV lithography has been delayed due to well-known issues such as source power, debris, pellicle, etc. for high volume manufacturing. For this reason, conventional optical lithography has been developed to cover more generations with various kinds of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bf8c6ddff5eced288e69ee2e037b7bc
https://doi.org/10.1117/12.2076308
https://doi.org/10.1117/12.2076308
Publikováno v:
SPIE Proceedings.
With the advent of system-on-chip (SOC) devices, resolving typical problems of composite designs is getting more urgent. The continuous effort for achieving tighter critical dimension (CD) tolerances together with the known phenomena of pattern densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46490b04555be4c3b30ea20fe05a05c7
https://doi.org/10.1117/12.438374
https://doi.org/10.1117/12.438374
Autor:
Karl Sommer, Yair Eran, Thomas Schaetz, Volodymyr Ordynskyy, Thomas Engel, Emanuele Baracchi, Gerald Galan, Corinne Miramond, Martin Verbeek, Roman Liebe, Hans Hartmann, Kai Peter, Hans-Juergen Brueck, Gerd Scheuring
Publikováno v:
SPIE Proceedings.
The reduction of wavelength in optical lithography and the use of enhancement techniques like phase shift technology, optical proximity correction (OPC), or off-axis illumination, lead to new specifications for advanced photomasks: a challenge for co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53fda25805a5bf81d1a71e5c7c1acac6
https://doi.org/10.1117/12.425084
https://doi.org/10.1117/12.425084
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::435f7e93c9a6d7d53feb05a04fcfac03
https://doi.org/10.1117/12.410771
https://doi.org/10.1117/12.410771
Publikováno v:
SPIE Proceedings.
Using a failure analysis-driven yield enhancements concept, based on an optimization of the mask manufacturing process and UV reticle inspection is studied and shown to improve the contact layer quality. This is achieved by relating various manufactu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37794ebd0b12ec7a59091d49d8fd5070
https://doi.org/10.1117/12.392072
https://doi.org/10.1117/12.392072
Autor:
Hans Hartmann, Hans-Juergen Brueck, Thomas Engel, Karl Sommer, Yair Eran, Olivier Maurin, Gerd Scheuring, Emanuele Baracchi, Kai Peter, Thomas Schaetz, Corinne Miramond, Frederic P. Lalanne
Publikováno v:
SPIE Proceedings.
The reduction of wavelength in optical lithography, phase shift technology and optical proximity correction (OPC), requires a rapid increase in cost effective qualification of photomasks. The knowledge about CD variation, loss of pattern fidelity esp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e585ba20eb002863922b50d89f5e1cb
https://doi.org/10.1117/12.392088
https://doi.org/10.1117/12.392088
Autor:
Andrew C. Hourd, Anja Rosenbusch, Hartmut Kirsch, Reuven Falah, Andrew McArthur, Shirley Hamar, Vicky Bailey, Neil J. Holmes, Yair Eran
Publikováno v:
SPIE Proceedings.
While the semiconductor industry is following a very aggressive roadmap without a corresponding reduction in exposure wavelength, the role of resolution enhancement techniques like PSM and OPC is becoming more and more important. Mask making for thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8caa5b0035e682fdf5a37ba5b0ded3d
https://doi.org/10.1117/12.392071
https://doi.org/10.1117/12.392071
Autor:
Yair Eran, Gidon Gottlib, Mircea Dusa, Shirley Hemar, Wolfgang Staud, Steve Warila, Amikam Sade
Publikováno v:
SPIE Proceedings.
Detection of reticle CD errors appears to be one of the most critical challenges for low-k1 lithography, where CD accuracy, as mean-to-normal and mask error factor determine most of wafer CD budget. Measurements of reticle CDs are always a difficult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b65665709bcd212585439ddbdb73fc98
https://doi.org/10.1117/12.392073
https://doi.org/10.1117/12.392073
Publikováno v:
SPIE Proceedings.
The process of manufacturing and inspecting 150nm generation reticles, incorporating RETs - Resolution Enhancement Technologies - is discussed. Some of the RETs applied at the lithography stage while exposing the wafer, such as OAI - Off Axis Illumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd98b4230b8b52e6410355731d493e98
https://doi.org/10.1117/12.392070
https://doi.org/10.1117/12.392070
Publikováno v:
SPIE Proceedings.
In this paper a new approach of concurrent CD-uniformity monitoring is presented. This is achieved by using the Linewidth Bias Monitoring (LBM) tool, which utilizes data collected during the reticle inspection to concurrently generate real-time line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e70f66552dfa2ad446d5f5993a190e58
https://doi.org/10.1117/12.377108
https://doi.org/10.1117/12.377108