Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Yaglikci, A. Giray"'
Autor:
Yağlıkçı, Abdullah Giray
Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is critical to ens
Externí odkaz:
http://arxiv.org/abs/2408.15044
Autor:
Canpolat, Oğuzhan, Yağlıkçı, A. Giray, Oliveira, Geraldo F., Olgun, Ataberk, Ergin, Oğuz, Mutlu, Onur
We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Counting (PRAC), described in JEDEC DDR5 specification's April 2024 update. Unli
Externí odkaz:
http://arxiv.org/abs/2406.19094
Autor:
Luo, Haocong, Olgun, Ataberk, Yağlıkçı, A. Giray, Tuğrul, Yahya Can, Rhyner, Steve, Cavlak, Meryem Banu, Lindegger, Joël, Sadrosadati, Mohammad, Mutlu, Onur
Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by keeping a DRAM row open for a long
Externí odkaz:
http://arxiv.org/abs/2406.16153
Autor:
Luo, Haocong, Yüksel, Ismail Emir, Olgun, Ataberk, Yağlıkçı, A. Giray, Sadrosadati, Mohammad, Mutlu, Onur
DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different DRAM read disturbance phenomena. RowHammer induces bitflips in physic
Externí odkaz:
http://arxiv.org/abs/2406.13080
Autor:
Yuksel, Ismail Emir, Tugrul, Yahya Can, Bostanci, F. Nisa, Oliveira, Geraldo F., Yaglikci, A. Giray, Olgun, Ataberk, Soysal, Melina, Luo, Haocong, Gómez-Luna, Juan, Sadrosadati, Mohammad, Mutlu, Onur
We experimentally analyze the computational capability of commercial off-the-shelf (COTS) DRAM chips and the robustness of these capabilities under various timing delays between DRAM commands, data patterns, temperature, and voltage levels. We extens
Externí odkaz:
http://arxiv.org/abs/2405.06081
Autor:
Canpolat, Oğuzhan, Yağlıkçı, A. Giray, Olgun, Ataberk, Yüksel, İsmail Emir, Tuğrul, Yahya Can, Kanellopoulos, Konstantinos, Ergin, Oğuz, Mutlu, Onur
RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g., refresh neighbo
Externí odkaz:
http://arxiv.org/abs/2404.13477
Autor:
Kanellopoulos, Konstantinos, Bostanci, F. Nisa, Olgun, Ataberk, Yaglikci, A. Giray, Yuksel, Ismail Emir, Ghiasi, Nika Mansouri, Bingol, Zulal, Sadrosadati, Mohammad, Mutlu, Onur
The adoption of processing-in-memory (PiM) architectures has been gaining momentum because they provide high performance and low energy consumption by alleviating the data movement bottleneck. Yet, the security of such architectures has not been thor
Externí odkaz:
http://arxiv.org/abs/2404.11284
Autor:
Oliveira, Geraldo F., Olgun, Ataberk, Yağlıkçı, Abdullah Giray, Bostancı, F. Nisa, Gómez-Luna, Juan, Ghose, Saugata, Mutlu, Onur
Processing-using-DRAM (PUD) is a processing-in-memory (PIM) approach that uses a DRAM array's massive internal parallelism to execute very-wide data-parallel operations, in a single-instruction multiple-data (SIMD) fashion. However, DRAM rows' large
Externí odkaz:
http://arxiv.org/abs/2402.19080
Autor:
Yağlıkçı, Abdullah Giray, Tuğrul, Yahya Can, Oliveira, Geraldo F., Yüksel, İsmail Emir, Olgun, Ataberk, Luo, Haocong, Mutlu, Onur
Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in DRAM where r
Externí odkaz:
http://arxiv.org/abs/2402.18652
Autor:
Bostanci, F. Nisa, Yuksel, Ismail Emir, Olgun, Ataberk, Kanellopoulos, Konstantinos, Tugrul, Yahya Can, Yaglikci, A. Giray, Sadrosadati, Mohammad, Mutlu, Onur
We propose a new RowHammer mitigation mechanism, CoMeT, that prevents RowHammer bitflips with low area, performance, and energy costs in DRAM-based systems at very low RowHammer thresholds. The key idea of CoMeT is to use low-cost and scalable hash-b
Externí odkaz:
http://arxiv.org/abs/2402.18769