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pro vyhledávání: '"Ya. V. Levitskii"'
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Autor:
M. I. Mitrofanov, M. N. Mizerov, Ya. V. Levitskii, V. P. Evtikhiev, G. V. Voznyuk, D. N. Nikolayev
Publikováno v:
Semiconductors. 53:1545-1549
The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminesc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00562f5be780b163e8e000b1dc2e1052
https://doi.org/10.1134/s1063782619110101
https://doi.org/10.1134/s1063782619110101
