Zobrazeno 1 - 10
of 1 048
pro vyhledávání: '"Ya. I. Alivov"'
Publikováno v:
Critical Reviews in Solid State and Materials Sciences. 34:89-179
We review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this treatment is mainly on high-κ dielectric, ferroelectric, magnetic,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05da0e50d84fc7a988adfdf126dcf474
https://doi.org/10.1080/10408430903368401
https://doi.org/10.1080/10408430903368401
Publikováno v:
Journal of the Korean Physical Society. 53:1982-1986
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::564652e95d945795202b88a242915337
https://doi.org/10.3938/jkps.53.1982
https://doi.org/10.3938/jkps.53.1982
Autor:
Ümit Özgür, Cole W. Litton, D. Johnstone, Kaigui Zhu, V. Avrutin, Ya. I. Alivov, S. Akarca-Biyikli, Qian Fan, Hadis Morkoç
Publikováno v:
Materials Science Forum. :1571-1574
Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac6ea73583dcc0d6582d69f92de67e6a
https://doi.org/10.4028/www.scientific.net/msf.527-529.1571
https://doi.org/10.4028/www.scientific.net/msf.527-529.1571
Autor:
Ümit Özgür, S. Dogˇan, V. Avrutin, Xing Gu, Yong-Tae Moon, Ya. I. Alivov, Y. Fu, C. Liu, Hadis Morkoç
Publikováno v:
Solid-State Electronics. 49:1693-1696
We report on the fabrication of n-GaN/n-ZnO/p-GaN double heterostructure-based light-emitting diodes and their electroluminescence (EL) properties. The current–voltage characteristics of the fabricated diodes revealed rectifying behavior with a lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c903d3eeb9ea2188099cb38e90087d9
https://doi.org/10.1016/j.sse.2005.07.021
https://doi.org/10.1016/j.sse.2005.07.021
Autor:
B. M. Ataev, G. A. Onushkin, S. Sh. Makhmudov, Ya. I. Alivov, V. V. Mamedov, E.V. Kalinina, A. K. Omaev
Publikováno v:
Journal of Crystal Growth. 275:e2471-e2474
We report on the first results of n-ZnO/p-SiC heterostructures fabrication by chemical vapor deposition in the low-pressure system. The structural and luminescence properties of these structures are studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e55cdd05adc1c08e166d40ec882805c
https://doi.org/10.1016/j.jcrysgro.2004.11.379
https://doi.org/10.1016/j.jcrysgro.2004.11.379
Publikováno v:
Thin Solid Films. 473:241-246
Thin polycrystalline ZnO films were obtained by thermal oxidation of metallic Zn films, thermally deposited on various substrates, such as silica, sapphire and glass, in both air and pure oxygen atmospheres. The quality of the ZnO layers was asserted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a3cd60bc6e2fd4c08064a1023a42933
https://doi.org/10.1016/j.tsf.2004.07.068
https://doi.org/10.1016/j.tsf.2004.07.068
Autor:
V. V. Mamedov, David C. Look, M. V. Chukichev, Ya. I. Alivov, A.N. Pustovit, V. I. Zinenko, Yu.A. Agafonov, B. M. Ataev
Publikováno v:
Solid-State Electronics. 48:2343-2346
A ZnO-based metal–insulator–semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I–V dependences show a good rectifying diode-like behavior with a low leakage current of 10−6 A and a threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f415ebcf5f4076e7957d71d2df79b4a0
https://doi.org/10.1016/j.sse.2004.05.063
https://doi.org/10.1016/j.sse.2004.05.063
Publikováno v:
physica status solidi (a). 201:2203-2212
Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm and lower. However, the most efficient solid-state emitters are p-n junctions, and p-type ZnO is difficult to make. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b045c1ed51c2cfef427b574f4b21b2
https://doi.org/10.1002/pssa.200404803
https://doi.org/10.1002/pssa.200404803
Publikováno v:
Semiconductors. 38:31-35
High quality ZnO single-crystal films were doped with copper by thermal diffusion, and their luminescent properties were studied by cathodoluminescence spectroscopy. Doping with copper increases the intensity of the green-emission band of the cathodo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68ddddd65c79be457e7600cebcded97
https://doi.org/10.1134/1.1641129
https://doi.org/10.1134/1.1641129
Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition
Publikováno v:
Semiconductors. 36:977-980
The cathodoluminescent properties of ZnO films in ZnO/GaN/α-Al2O3 and ZnO/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition in a low-pressure flowing-gas reactor were studied and compared. A superlinear dependence of the exciton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe0d045e83b20019e8f1eaf23fe30e1
https://doi.org/10.1134/1.1507276
https://doi.org/10.1134/1.1507276