Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ya. F. Kononets"'
Autor:
Z. L. Denisova, Yu. V. Kopytko, N.A. Vlasenko, Ya. F. Kononets, A.A. Vdovenkov, L. I. Veligura
Publikováno v:
Journal of Crystal Growth. 257:263-271
Some essential photoinduced effects on the characteristics of ZnS:Mn electron-beam evaporated films and thin-film electroluminescent (TFEL) devices based on them have been revealed when Hg-lamp irradiation and quartz halogen lamp illumination are use
Autor:
F.-J. Niedernostheide, N.A. Vlasenko, Hans-Georg Purwins, A.S. Klimenko, V.M. Popov, S. Zuccaro, I.A. Gumenyuk, L. I. Veligura, Ya. F. Kononets
Publikováno v:
physica status solidi (a). 194:237-243
A temperature (T) rise from 20 up to 80 °C results in some decrease of the threshold voltage and slope of the voltage (V) dependences of the luminance and the transferred charge of the electron-beam evaporated ZnS:Mn ac thin film electroluminescent
Autor:
Z. L. Denisova, M.B. Kotlyarevsky, A.S. Revenko, L. I. Veligura, V.V. Kidalov, Ya. F. Kononets, N.A. Vlasenko
Publikováno v:
physica status solidi (a). 193:338-346
Doping with oxygen of ZnS:Mn films was performed by annealing at 400-600 °C in an atomic oxygen flow obtained by a HF discharge. The effect of such a doping on the electrooptical, luminescent, and photoelectrical characteristics of ac thin-film elec
Publikováno v:
Journal of Crystal Growth. 216:245-248
The temperature ( T ) dependence of some characteristics of electroluminescence (EL) and photoluminescence (PL) of SrS : Cu(Ag) thin-film electroluminescent devices made by sputtering and atomic layer epitaxy (ALE) techniques has been studied in the
Publikováno v:
Semiconductors. 32:491-494
Changes have been observed and investigated in the electrooptic properties of ZnS: Mn films used in thin-film electroluminescent structures as a result of irradiation by ultraviolet pulses with energies per pulse much smaller than the threshold energ
Autor:
Ya. F. Kononets
Publikováno v:
Technical Physics Letters. 24:124-126
It is shown that short-term exposure of thin-film electroluminescent structures based on ZnS:Mn films to ultraviolet pulses with energy much lower than the threshold energies for laser annealing of ZnS:Mn films can enhance the brightness and efficien
Publikováno v:
SPIE Proceedings.
New non-destructive method of diagnostics and characterization of ACTFEL devices based on analysis of experimental and calculated photodepolarization spectra is proposed. This method gives an important information concerning the signa nd spatial dist
Publikováno v:
Journal of the Society for Information Display. 12:179
Electroluminescent near-infrared (NIR) emitters are of interest in creating special displays for applications such as communications, chemical sensoring, friend-and-foe identification, aligning and checking systems that detect NIR radiation, medicine