Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ya. E. Pokrovskii"'
Autor:
N. A. Khval’kovskii, Ya. E. Pokrovskii
Publikováno v:
Journal of Experimental and Theoretical Physics. 117:742-746
Spontaneous emission and photoconductivity of germanium with gallium impurity are studied for determining the energy spectrum of hole states in this material in which radiation can be induced as a result of transitions of holes between these states.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e9ae1616a6517a2e780e9023701e2f0
https://doi.org/10.1134/s1063776113120182
https://doi.org/10.1134/s1063776113120182
Autor:
Ya. E. Pokrovskii, N. A. Khval’kovskii
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 80:335-338
To identify optical transitions that can excite long-wavelength stimulated radiation in uniaxially compressed Ga-doped germanium, the absorption and photoconduction spectra of this material were studied over a wide range of pressures in the [111] and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd35c86a7d53fe94a963124bb206d97
https://doi.org/10.1134/1.1825117
https://doi.org/10.1134/1.1825117
Autor:
N. A. Khval’kovskii, Ya. E. Pokrovskii
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 79:650-656
The kinetics of photoconductivity is studied in silicon doped with B, Al, Ga, In, P, As, and Sb with concentrations of 1016–1018cm−3 at 4.2 and 10.5 K placed in an 8-mm microwave electric field under pulsed impurity excitation. It is found that i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::756bba4c1d8512355637e8d08c1a32f4
https://doi.org/10.1134/1.1790025
https://doi.org/10.1134/1.1790025
Autor:
N. A. Khval’kovskii, Ya. E. Pokrovskii
Publikováno v:
Semiconductors. 37:1266-1274
The long-wavelength bands of absorption by the impurity pairs and photoconductivity in the microwave (8 mm) electric field with the impurity pulse photoexcitation are investigated for Si doped by B, Al, Ga, In, P, As, and Sb in concentrations 1016–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::985311ee28b0e91c5f90af0491e6e61c
https://doi.org/10.1134/1.1626206
https://doi.org/10.1134/1.1626206
Autor:
Ya. E. Pokrovskii, N. A. Khval’kovskii
Publikováno v:
physica status solidi (c). :707-710
In Si doped with group III and V impurities at concentrations of 1016–1018 cm–3 infrared absorption bands of impurity pairs (IPs) appear and there is a slow relaxation of polarization hopping photoconductivity (PC) in a microwave (MCW) electric f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c703df1c764578ad2761e801b9356d
https://doi.org/10.1002/pssc.200306192
https://doi.org/10.1002/pssc.200306192
Publikováno v:
Journal of Experimental and Theoretical Physics. 95:83-86
Infrared absorption bands, shifted to regions of lower energies relative to narrow lines of transitions of impurities to excited states, are investigated in silicon doped with group III and V impurities in concentrations above 1016 cm−3. It is foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5fb0d97ee3eb2dc3914d95c04742b22
https://doi.org/10.1134/1.1499905
https://doi.org/10.1134/1.1499905
Publikováno v:
physica status solidi (b). 210:809-813
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::502a11c5385b8aba8cf448752b6d1d9e
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<809::aid-pssb809>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<809::aid-pssb809>3.0.co
Publikováno v:
Journal of Experimental and Theoretical Physics. 87:1201-1204
The kinetics of the photoresponses in constant and microwave electric fields and the variation of the absorption of background radiation in GaP doped with Te (2×1017 cm−3) upon impurity excitation at 5–50 K are investigated. The lifetime of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930f25aac3c586ca0448dbb7ae488263
https://doi.org/10.1134/1.558613
https://doi.org/10.1134/1.558613
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 66:241-244
The photoconductivity (PC) spectra and the induced absorption of background radiation in the energy range 10–40 meV are investigated in weakly compensated B-, Ga-, and As-doped silicon at 4.2 K. It is shown that dips corresponding to the photoioniz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b234260e9de182cc8d2df4c74371fe
https://doi.org/10.1134/1.567542
https://doi.org/10.1134/1.567542
Publikováno v:
Journal of Experimental and Theoretical Physics. 85:121-129
The lifetime of charge carriers in the lowest excited states of some impurities of groups III and V in diamond, silicon, and germanium can be several (four to six) orders of magnitude longer that the lifetime of free carriers. Accumulation of carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abcce1a26556ce9dda83f9af90eb0dcf
https://doi.org/10.1134/1.558294
https://doi.org/10.1134/1.558294