Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Ya. A. Ugai"'
Publikováno v:
Inorganic Materials. 38:12-16
Thin PbTe films on Si substrates were doped with Ga via annealing in the vapor produced by heating a Ga(l) + GaTe(s) mixture (GaTe(s) + L1+ Vequilibrium). Electrical measurements showed that the vapor-phase doping reduced the hole concentration in th
Publikováno v:
Inorganic Materials. 38:450-456
In depositing thin PbTe films onto Si substrates by a modified hot-wall method, Pb1 – xGa x melts were used as Ga vapor sources in combination with separate Pb and Te sources. Data on the vaporization behavior of Pb1 – xGa x melts were used to de
Publikováno v:
Inorganic Materials. 37:1106-1111
In depositing thin PbTe〈Ga〉 films onto Si and SiO2 /Si substrates by the hot-wall method, Pb1 – x Ga x melts were used as Ga vapor sources in combination with separate Pb and Te vapor sources. The vaporization of Pb1 – x Ga x (0.15 ≤ x≤ 0
Publikováno v:
Inorganic Materials. 36:449-453
An attempt was made to reduce the carrier concentration in thin PbTe films on Si substrates by optimizing deposition conditions. A modified hot-wall method was used for reproducible growth ofp-type films with 5 × 1015 < p(77 K) < 5 × 1017 cm-3 andn
Publikováno v:
Inorganic Materials. 42:723-725
Microhardness data for PbTe1−xHalx (Hal = Cl, Br, I) solid solutions are used to evaluate the halogen solubility in PbTe. The density of the PbTe1−xHalx solid solutions is shown to drop with increasing halogen content, with a rate decreasing in t
Publikováno v:
Inorganic Materials. 40:806-808
The lattice parameter of PbTe1 – x I x solid solutions is shown to be a nonmonotonic function, with a sharp minimum, of iodine content. This finding is interpreted in terms of a defect formation model. The model is also used to evaluate the radii o
Publikováno v:
Journal of Alloys and Compounds. 178:131-138
Differential thermal analysis and X-ray phase analysis were used to investigate the preparation conditions and composition of products of the borothermal reduction of oxides of 3d transition metals (titanium, vanadium, chromium, manganese, iron, coba
Publikováno v:
AIP Conference Proceedings.
The transition kinetics of amorphous boron into α‐boron is studied by differential thermal analysis (DTA) under isothermal conditions. The most probable functions describing α‐boron crystallization under isothermal conditions was found. It was
Publikováno v:
Physica Status Solidi (a). 86:K51-K54
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 6:231-238
The participation of 3d electrons in chemical bonds and their part in the formation of valence bands was studied by X-ray photoelectron- and X-ray-spectroscopy for Cu, Zn and Ga phosphides, sulphides and oxides. Incomplete screening of ( n + 1)s,p el