Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ya-Wei Dai"'
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Wafer-level chip-scale package (WLCSP) has attract broad interest from fundamental sciences to industrial applications due to its advantages in ease of fabrication, low cost and real die size packaging, etc. However, in the advanced WLCSP process, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ccf7144e7009a3591f580d048086d70
https://doi.org/10.1109/icsict49897.2020.9278295
https://doi.org/10.1109/icsict49897.2020.9278295
Autor:
Leon O. Chua, Peng Zhou, Tian-Yu Wang, Qing-Qing Sun, Ya-Wei Dai, David Wei Zhang, Lin Chen, Ming-Yang Cha, Hao Zhu, Shi-Jin Ding
Publikováno v:
Nanoscale. 10:15826-15833
Brain-inspired neuromorphic computing has shown great promise beyond the conventional Boolean logic. Nanoscale electronic synapses, which have stringent demands for integration density, dynamic range, energy consumption, etc., are key computational e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bda29b6f66048701f618d58a6cd01df
https://doi.org/10.1039/c8nr04734k
https://doi.org/10.1039/c8nr04734k
Autor:
Ya-Wei Dai, Lin Chen, Jing Xu, Peng Zhou, Qian Cao, Mao-Lin Shi, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang
Publikováno v:
Vacuum. 140:139-143
Benefiting from the good etching and patterning feasibilities and excellent electrical properties, platinum silicide attracts renewed attention as a suitable candidate for the next generation complementary metal-oxide-semiconductor (CMOS) technologie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea3795b7e567978e65cf246e17a0698
https://doi.org/10.1016/j.vacuum.2016.12.015
https://doi.org/10.1016/j.vacuum.2016.12.015
Publikováno v:
ACS Applied Materials & Interfaces. 9:18215-18221
Two-dimensional (2D) semiconductors have become promising candidates for nanoelectronics applications due to their unique layered structure and rich physical properties. However, the significant lack of reproducible p-type doping methods that can avo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02621aad83308f9da901acbd30d539d7
https://doi.org/10.1021/acsami.7b03177
https://doi.org/10.1021/acsami.7b03177
Autor:
Jing Xu, Shi-Jin Ding, Da-Ting Wang, Lin Chen, Peng Zhou, David Wei Zhang, Qing-Qing Sun, Ya-Wei Dai, Pengfei Wang
Publikováno v:
IEEE Electron Device Letters. 37:878-881
This letter investigates the switching behavior of TaN/Al2O3:Ag:ZnO/ITO memristors fabricated on flexible substrates, for flexible nonvolatile memory and neuromorphic computing applications. The embedded Ag nanoparticles provide for improved device y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4ff5e840700f23debc943245fa56a8
https://doi.org/10.1109/led.2016.2570279
https://doi.org/10.1109/led.2016.2570279
Autor:
Lin, Chen, Tian-Yu, Wang, Ya-Wei, Dai, Ming-Yang, Cha, Hao, Zhu, Qing-Qing, Sun, Shi-Jin, Ding, Peng, Zhou, Leon, Chua, David Wei, Zhang
Publikováno v:
Nanoscale. 10(33)
Brain-inspired neuromorphic computing has shown great promise beyond the conventional Boolean logic. Nanoscale electronic synapses, which have stringent demands for integration density, dynamic range, energy consumption, etc., are key computational e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f55145d1ee8c7734f6575f23291ecc80
https://pubmed.ncbi.nlm.nih.gov/30105324
https://pubmed.ncbi.nlm.nih.gov/30105324
Publikováno v:
Solid State Ionics. 273:66-69
Two Resistive Random Access Memory (RRAM) devices were designed with the thin Al 2 O 3 /thick HfO 2 stack as a functional layer. These devices used different thickness of Al 2 O 3 layer and same thickness of HfO 2 layer. The fluctuation of the SET an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5dc40addc3ce68cde312061323a2f14
https://doi.org/10.1016/j.ssi.2014.08.014
https://doi.org/10.1016/j.ssi.2014.08.014
Publikováno v:
ACS applied materialsinterfaces. 9(21)
Two-dimensional (2D) semiconductors have become promising candidates for nanoelectronics applications due to their unique layered structure and rich physical properties. However, the significant lack of reproducible p-type doping methods that can avo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::901668b22046091620ed4481b494d82f
https://pubmed.ncbi.nlm.nih.gov/28480706
https://pubmed.ncbi.nlm.nih.gov/28480706
Autor:
Lin Chen, Ya-Wei Dai, Shi-Jin Ding, Hao Zhu, Qing-Qing Sun, David Wei Zhang, Jing Xu, Qian Cao
Publikováno v:
Science Advances
We achieved record high photoresponsivity in both MoS2 and ReS2 on the structure of an Al2O3/ITO/SiO2/Si “stack.”
Transistors with exfoliated two-dimensional (2D) materials on a SiO2/Si substrate have been applied and have been proven effect
Transistors with exfoliated two-dimensional (2D) materials on a SiO2/Si substrate have been applied and have been proven effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::829357ee842cd3dff7d2cc2a98d25cf7
https://doi.org/10.1126/sciadv.1602246
https://doi.org/10.1126/sciadv.1602246
Autor:
Lin Chen, David Wei Zhang, Ya-Wei Dai, Shi-Jin Ding, Qing-Qing Sun, Mao-Lin Shi, Peng Zhou, Jing Xu, Qian Cao
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
This work is focused on synthesis of molybdenum oxide (MoO3) by Plasma Enhanced Atomic layer deposition (PEALD) using molybdenum hexacarbonyl (Mo(CO)6) is selected as precursor for Mo and O2 is adopted as precursor for plasma. Ex-situ growth characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f86caddc350c75a1ece534694c8905ba
https://doi.org/10.1109/icsict.2016.7998636
https://doi.org/10.1109/icsict.2016.7998636