Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ya-Ru Jhuang"'
Autor:
Bing-Yue Tsui, Ya-Ru Jhuang, Jian-Hao Lin, Yi-Ting Huang, Te-Kai Tsai, Kai-Ti Hsu, Yi-Han Su, Yong-Fen Hsieh
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d2b704609387aaae4029dc13644b900
https://doi.org/10.1109/edtm53872.2022.9798380
https://doi.org/10.1109/edtm53872.2022.9798380
Autor:
Ya-Hsin Lee, Yi-Ting Shih, Fang-Hsin Lu, Pei-Wen Li, Fu-Hsiang Chuang, Bing-Yue Tsui, Jung-Chien Cheng, Liang-Yu Chen, Ya-Ru Jhuang, Yi-Ting Huang, Chia-Lung Hung
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We report a high performance 4H-SiC CMOS process for sub-10 V operation featuring LOCal Oxidation of SiC isolation and balanced gate oxidation process. Temperature stability of SiC MOSFETs and CMOS inverters are characterized up to 300 °C. High volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42736c1a1359dd6dc3976acd17e56fd8
https://doi.org/10.1109/vlsi-tsa51926.2021.9440126
https://doi.org/10.1109/vlsi-tsa51926.2021.9440126