Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ya-Mei Dou"'
Publikováno v:
World journal of pediatrics : WJP.
Background The objective of this paper is to analyze the current status of monkeypox worldwide. In the face of this public health threat, our purpose is to elucidate the clinical characteristics and epidemiology of monkeypox, the developmental progre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df2ae1b979ed33fa37c564f594b9b2b7
https://pubmed.ncbi.nlm.nih.gov/36214966
https://pubmed.ncbi.nlm.nih.gov/36214966
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
We experimentally investigate the one-dimensional transport through two subbands in silicon junctionless nanowire transistors. The drain-voltage dependent properties of one-dimensional transport was discussed in detail. The quantized drain current an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::050d8f136a40f5f2ab6ed2e27eb67588
https://doi.org/10.1109/icsict.2018.8564887
https://doi.org/10.1109/icsict.2018.8564887
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
The n-type junctionless nanowire transistor was successfully fabricated on the silicon-on-insulator substrate. Its core component, silicon nanowires, is defined by processes such as electron beam exposure and inductively coupled plasma etching. We ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd8b1b064b83fcaf208f1f1e675046b8
https://doi.org/10.1109/icsict.2018.8564970
https://doi.org/10.1109/icsict.2018.8564970
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Silicon junctionless nanowire transistors with the typical nanowire section of 18 nm width and 30nm height are fabricated and the current-voltage characteristics are measured at low temperatures in this paper. We demonstrate the one-dimension electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::420177fd17b6754ae56d0bb6748fd31a
https://doi.org/10.1109/icsict.2018.8565020
https://doi.org/10.1109/icsict.2018.8565020
Publikováno v:
Chinese Physics B. 28:107303
We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67f08b79c710c0cf8784243869ece9e0
https://doi.org/10.1088/1674-1056/ab3e68
https://doi.org/10.1088/1674-1056/ab3e68
Publikováno v:
Chinese Physics B. 28:066804
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0727da7de19803a58f10ff89d14c39d6
https://doi.org/10.1088/1674-1056/28/6/066804
https://doi.org/10.1088/1674-1056/28/6/066804
Publikováno v:
Chinese Physics B. 27:097310
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1765927b9a6a39ccb76015694d68e299
https://doi.org/10.1088/1674-1056/27/9/097310
https://doi.org/10.1088/1674-1056/27/9/097310
Publikováno v:
Chinese Physics B. 27:088106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da7887271354a51215a9288f78ef39f5
https://doi.org/10.1088/1674-1056/27/8/088106
https://doi.org/10.1088/1674-1056/27/8/088106
Publikováno v:
Chinese Physics B; Sep2018, Vol. 27 Issue 9, p1-1, 1p
Publikováno v:
Chinese Physics B; Aug2018, Vol. 27 Issue 8, p1-1, 1p